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fet power transistor smd

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FMM5061 L-Band Medium & High Power GaAs FET FUJITSU RF Power Transistors SMD

China FMM5061 L-Band Medium & High Power GaAs FET FUJITSU RF Power Transistors SMD on sale
FMM5061 is a L-Band Medium & High Power GaAs FET. Part NO: FMM5061 Brand: FUJITSU Date Code: 04+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

N Channel 175 MOhm Typ Mosfet Power Transistor SMD / SMT Installation HV Package

China N Channel 175 MOhm Typ Mosfet Power Transistor SMD / SMT Installation HV Package on sale
Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines......
Shenzhen Weitaixu Capacitor Co.,Ltd

Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China

HMC442LC3BTR RF Power Transistor - Great For High Speed Applications

China HMC442LC3BTR RF Power Transistor - Great For High Speed Applications on sale
... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

China RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet on sale
... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is ......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

China RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers on sale
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND  ...
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS

China Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS on sale
... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ......
Shenzhen Huahao Gaosheng Technology Co., Ltd

Address: 2A2003, Building 2, Baohuju Garden, 200 Huaqing Avenue, Qinghu Community, Longhua Street, Longhua District, Shenzhen

Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

China Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V on sale
...Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

Original High Voltage Mosfet Power Transistor Mosfet Driver Using Transistor

China Original High Voltage Mosfet Power Transistor Mosfet Driver Using Transistor on sale
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Beijing Silk Road Enterprise Management Services Co.,LTD

IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V

China IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V on sale
...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor...
Walton Electronics Co., Ltd.

Address: 5C,Building D,GALAXY WORLD.Longhua District, Shenzhen.CN

STGB10NC60KDT4 IGBT Power Transistor 600V 20A 65W N Channel For Motor Drives

China STGB10NC60KDT4 IGBT Power Transistor 600V 20A 65W N Channel For Motor Drives on sale
...Transistor Applications High frequency motor controls SMPS and PFC in both hard switch and resonant topologies Motor drives Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: D2PAK-3 Mounting Style: SMD......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

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