RF Power Transistors PTF180901F GSM/EDGE RF Power FET ERICSSON RF Power Transistors
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PTF180901F is a GSM/EDGE RF Power FET . Part NO: PTF180901F Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Over View: Mega Source ......
Mega Source Elec.Limited
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Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors
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VBE Technology Shenzhen Co., Ltd.
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50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
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...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor
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Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor Description The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz. It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package. It can support CW......
Sanhuang electronics (Hong Kong) Co., Limited
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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET
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... Hole TO-220AB Specification: Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)...
Guangzhou Topfast Technology Co., Ltd.
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Current 31A Mosfet Power Transistor IRFR5305TRPBF Voltage 55V For Power Circuit General
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... to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and...
Shenzhen ATFU Electronics Technology ltd
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ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB
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...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor......
Walton Electronics Co., Ltd.
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Single Mosfet BSZ050N03LSGATMA1 BSZ050 Transistor PG-TSDSON-8
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... (ECDSA):ECDSA-based authentication Product Specifications Gate Charge (Qg) (Max) @ Vgs: 35 NC @ 10 V Technology: MOSFET (Metal Oxide) FET Type N-Channel Drain to Source Voltage (Vdss) 30 V Drive Voltage (Max Rds On,...
Shenzhen Tengshengda ELECTRIC CO., LTD.
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Electric Motorcycle 18 Mosfet Power Transistor With 24 Months Warranty
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...power transistors for electric motorcycle 18 mosfets 35A controller 48-96v factory direct Specifications of our controller In order to better play the controller's performance and product stability, all of our controllers use imported power transistors. Rated voltage 48-96v Rated Power 800-2000w Color silver Mosfet 18 Model 18 mosfets......
Changzhou Suring motor technology CO.,LTD
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Ultra band 1000-2000MHz 47dBm Gain RF power amplifier Module for anti drone system
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.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects....
Amplifier module
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