IGBT Power Module MGF0906B - TOSHIBA - < High-power GaAs FET (small signal gain stage)>
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... High output power P1dB=37.0dBm(TYP.) @f=2.3GHz High power gain GLP=11.0dB(TYP.) @f=2.3GHz High power added efficiency P.A.E =40%(TYP.) @f=2.3GHz,P1dB Hermetically sealed metal-ceramic package with ceramic lid Specifications: part no...
Mega Source Elec.Limited
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NH1GG69V250P 1250V 250A SiC MOSFET Module Low Rds(on) 3.3mΩ Fast Switching High Frequency Low Loss High Power Density Industrial Grade For PV Inverters and Motor Drives
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...-isolated gripping lugs Double indicator 0% cadmium Applications gG: general purpose cable and line protection Description The NH1GG69V250P is a high-power Silicon Carbide (SiC) MOSFET module engineered for the most...
TOP Electronic Industry Co., Ltd.
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F16N65L TO-220F-3L N-CHANNEL High Power MOSFET 16A 650V Applications In Switching Power Supplies And Adaptors
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... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in...
Shenzhen Hunt Electronics Co., Ltd
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High Side BLDC Motor Driver MOSFET Enhancement Mode Power For Power Switching
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...Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power......
Shanghai Juyi Electronic Technology Development Co., Ltd
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4H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices
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... substrates for semiconductor, Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2...
SHANGHAI FAMOUS TRADE CO.,LTD
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Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
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Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working......
Shenzhen Hongxinwei Technology Co., Ltd
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Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors
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VBE Technology Shenzhen Co., Ltd.
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Tunnel Power 1200KVA Modular UPS System High Power Density Easy Maintenance
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...Power Supply Modular UPS System 3PH / 4W 3 Level MOSFET Inverter Technology CNM330 series is modular online UPS for sensitive equipment. The single cabinet power rating covers from 10KVA to 300KVA which delivers the best of combination of reliability, hot-swappable and flexibility. With the latest IGBT three-level technology and DSP control, CNM330 achieves a high input power......
Shenzhen Consnant Technology Co., Ltd.
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IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A
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... ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Description: This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a...
Guangzhou Topfast Technology Co., Ltd.
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SKYWORKS SI8284CC AS integrated DC DC converter gate driver for Silicon Carbide FET and power MOSFET
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...FET-Ready ISODrivers with Integrated DC-DC Converters The Si828x family (Si8281/82/83/84) offers isolated, high-current gate drivers with integrated system safety and feedback functions. These devices are ideal for driving Silicon Carbide (SiC) FETs, power MOSFETs......
Beijing Silk Road Enterprise Management Services Co., Ltd.
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