MOSFET The Ultimate High Power Efficiency Breakthrough
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... MOSFET is engineered to deliver exceptional power output while maintaining high efficiency levels, making it an ideal choice for demanding industrial and commercial applications. With its high voltage fet capabilities, this High Power MOSFET is capable of...
Reasunos Semiconductor Technology Co., Ltd.
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NTMFS5C460NLT1G MOSFET Power Electronics 8-PowerTDFN High Power Efficiency Low On Resistance Switch Mode Supplies
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NTMFS5C460NLT1G MOSFET Power Electronics 8-PowerTDFN High Power Efficiency Low On Resistance Switch Mode Supplies FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 78A (Tc) Drive ......
Shenzhen Sai Collie Technology Co., Ltd.
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High Power MOSFET SSN1N45B Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92
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High Power MOSFET SSN1N45B Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ......
Sunbeam Electronics (Hong Kong) Limited
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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet
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... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is ......
Anterwell Technology Ltd.
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17a 55v 45w High Power Transistor Surface Mount IRFR024NTRPBF D Pak N Channel
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...HIGH POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free Status / RoHS Status: Lead Free / RoHS Compliant High Light: high power mosfet transistors , n channel mosfet......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Toshiba TK100E03G1S1X(S MOSFET 80V N-Ch PWR FET 9000pF 130nC 214A power ic chip
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... a maximum voltage rating of 650V and a maximum current rating of 30A in a TO-247 package. It is ideal for applications requiring low on-resistance, high efficiency and high-speed switching. It is designed for industrial, automotive,...
Shenzhen Zhaocun Electronics Co., Ltd.
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FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance
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FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components......
Shenzhen Koben Electronics Co., Ltd.
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IGBT Power Module MGF0906B - TOSHIBA - < High-power GaAs FET (small signal gain stage)>
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... High output power P1dB=37.0dBm(TYP.) @f=2.3GHz High power gain GLP=11.0dB(TYP.) @f=2.3GHz High power added efficiency P.A.E =40%(TYP.) @f=2.3GHz,P1dB Hermetically sealed metal-ceramic package with ceramic lid Specifications: part no...
Mega Source Elec.Limited
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IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mΩ TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications
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...Power MOSFET 100V Ultra-Low Rds(on) 1.9mandOmega; TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications andnbsp; Features Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency......
TOP Electronic Industry Co., Ltd.
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Through Hole High Power Transistor , AOTF14N50 N Channel Mosfet N-CH 500V 14A TO220F
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Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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