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high power devices sic wafer

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Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

China Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices on sale
... conductivity and high temperature resistance, which is widely used in high-power and high-frequency electronic devices. P-type doping is achieved by introducing elements such as aluminum (Al), which makes the material electropositive and suitable for...
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

Optoelectronic Device SiC Wafer for Light Emitting Diodes

China Optoelectronic Device SiC Wafer for Light Emitting Diodes on sale
... material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2...
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Address: No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China

4H N Type SiC Crystal,4”Size -SiC Wafer Manufacturer

China 4H N Type SiC Crystal,4”Size -SiC Wafer Manufacturer on sale
... generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China

6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade

China 6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade on sale
...SiC) Substrates 4H and 6H Epi-Ready SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide(SiC) wafer N Type 6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic About Silicon Carbide (SiC)Crystal Shanghai Famous Trade Co., Ltd 150 mm SiC wafers offer device manufacturers a consistent, high-quality substrate for developing high-performance power devices. Our SiC......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

High-Power Device 2400-2500MHz 5W RF Power Amplifier for 2.4GHz Wireless Communication

China High-Power Device 2400-2500MHz 5W RF Power Amplifier for 2.4GHz Wireless Communication on sale
High-Power Device 2400-2500MHz 5W RF Power Amplifier for 2.4GHz Wireless Communication The 2400-2500MHz 5W RF power amplifier is a high-power device with the following key features: Frequency Range: Covers 2400MHz to 2500MHz, suitable for 2.4GHz wireless communication (such as Wi-Fi and Bluetooth). Output Power: Provides 5W (37dBm) output, enhancing signal transmission distance and coverage. High......
Nanjing Shinewave Technology Co., Ltd.

Address: Room 410, building 2, Big Data Industrial Base, Software Avenue, Yuhuatai District, Nanjing

Cylindrical 3.2V LiFePO4 Battery LFR18500P 900mAh Power Type for High Power Devices

China Cylindrical 3.2V LiFePO4 Battery LFR18500P 900mAh Power Type for High Power Devices on sale
...Power Type for High Power Devices Features For Cylindrical 3.2V LiFePO4 Battery LFR18500P 900mAh Power Type for High Power Devices Excellent abuse tolerance and environmentally friendly with Rohs Certification Excellent calendar life circle life over 2000times Application for Cylindrical 3.2V LiFePO4 Battery LFR18500P 900mAh Power Type for High Power Devices Portable high power devices......
Guang Zhou Sunland New Energy Technology Co., Ltd.

Address: No.27 BOWANG Street ,Nan Cun Town, Panyu, Guangzhou, GD,China

Wireless 2000RPM 100A High Current Slip Ring For High Power Devices Transmitting

China Wireless 2000RPM 100A High Current Slip Ring For High Power Devices Transmitting on sale
... high-current slip ring developed by SenRing for electroplating equipment, strengthening machines, and other high-power high-current devices. It has a single-channel 100A high-current specification and is installed with a terminal. It is easy to install,...
Shenzhen Senring Electronics Co., Ltd.

Address: Room 101-301, No. 36, Xingda Road, Yanchuan Community, Yanluo Street, Shenzhen, Guangdong, China

4 inch 4H-SI SiC wafer manufacturer SiC substrate supplier

China 4 inch 4H-SI SiC wafer manufacturer SiC  substrate supplier on sale
...SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device......
Homray Material Technology

Address: 苏州吴中区苏蠡路

BAKTH-0016S030A-0029-01 15S Lithium Battery Overcharge/Overdischarge/Short-Circuit Protection Board for High-Power Devices

China BAKTH-0016S030A-0029-01 15S Lithium Battery Overcharge/Overdischarge/Short-Circuit Protection Board for High-Power Devices on sale
BAKTH-0016S030A-0029-01 15S Lithium Battery Overcharge/Overdischarge/Short-Circuit Protection Board for High-Power Devices The BAKTH-0016S030A-0029-01 is a high-voltage, high-reliability protection board optimized exclusively for 15-cell series (15S) ......
Shenzhen BAK Technology Co., Ltd.

Address: RM 2201, Longshenghengbo Center, Jianshe East Road and Bulong Road Intersection, Longhua District, Shenzhen, Guangdong, China

Beijing sunrise fractional multifunction rf tube CO2 high power device on hot sale

China Beijing sunrise fractional multifunction rf tube CO2 high power device on hot sale on sale
... CO2 heads, 1 normal cutting head laser tube: Metal RF tube from USA Coherent company Power: 30W, 40W, 60W optional What Is The Working Principle Of Fractional Laser CO2 cutting machine ? Fractional ablative CO2 resurfacing ......
Beijing Sunrise Science &Technology Co., Ltd.

Address: Room 705, Bldg. 2, Bopu Center, Yard 3, Sec. 2, Xinghua Street, Daxing District, China (Mainland), Beijing, China

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