Integrated Circuit Chip IKB40N65ES5ATMA1 High Speed IGBT Transistors With Anti-Parallel Diode
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Integrated Circuit Chip IKB40N65ES5ATMA1 High Speed IGBT Transistors With Anti-Parallel Diode [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Lead Free N Channel Mosfet Transistor , 200V 18A High Speed Mosfet Transistor IRF640NPBF
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... Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ......
Shenzhen ATFU Electronics Technology ltd
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MMBT4403 NPN High Speed Switching Transistor High Performance
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SOT-23 Plastic-Encapsulate Transistors MMBT4403 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module
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Toshiba IGBT Power Module MG200Q1US51 Transistor Module MG200Q1US51 Product Description Manufactured by: Toshiba America, Inc. Part number: MG200Q1US51 Part Category: Transistors Description: 300A, 1200V, N-CHANNEL IGBT Collector-Emitter Voltage: 1200V ......
Guangzhou Sande Electric Co.,Ltd.
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Lead Free N Channel Mosfet Transistor , 200V 18A High Speed Mosfet Transistor IRF640NPBF
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... Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ......
ChongMing Group (HK) Int'l Co., Ltd
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HMC442LC3BTR RF Power Transistor - Great For High Speed Applications
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... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low noise -...
Shenzhen Sai Collie Technology Co., Ltd.
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Heatproof High Voltage SiC Mosfet , Multipurpose N Channel Fet Transistor
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...High Voltage MOS-Gate Transistor, commonly known as High Voltage FET, is a type of semiconductor device designed for use in high voltage applications. This device has been gaining popularity due to its strong performance and wide range of applications. It offers excellent characteristics in high......
Reasunos Semiconductor Technology Co., Ltd.
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FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance
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FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components......
Shenzhen Koben Electronics Co., Ltd.
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2SD1594 3 Pin Transistor NEC NPN Power Transistor Switching High Speed
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2SD1594 3 Pin Transistor NEC NPN Power Transistor Switching High Speed Silicon NPN Power Transistor NEC 2SD1594 DESCRIPTION · With TO-220Fa package · Low collector saturation voltage A PPLICATIONS · Low frequency power amplifier · High speed switching ......
Anterwell Technology Ltd.
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Integrated HMI PLC 12DI 12DO Works 2 Programming Software With 6 High-Speed Counts And 8 High-Speed Pulses
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...High-Speed Counts And 8 High-Speed Pulses Precautions for Coolmay PLC output type selection MT: means transistor output, MR: means relay output, MRT: means relay transistor mixed output, the main difference between transistor output and relay output is: The difference in current load. At present, the maximum current load of transistors......
Shenzhen Coolmay Technology Co., Ltd.
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