YJJ G12180-010A Indium Gallium Arsenic PIN Photodiode
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Product Description: G12180-010A Indium Gallium Arsenic PIN Photodiode Features: peculiarity - Low noise, low dark current - Low junction capacitance - Receiving surface: φ1mm - Low noise ......
ShenzhenYijiajie Electronic Co., Ltd.
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InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um
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...Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um Indium InAs or indium arsenide monolithic is a semiconductor composed of indium and arsenic. It has a gray cubic crystal appearance and a melting point of 942°C. Indium arsenide is used to construct infrared detectors in the wavelength range of 1-3.8um. The detector is usually a photovoltaic photodiode......
SHANGHAI FAMOUS TRADE CO.,LTD
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InAs Wafer Crystal Substrates N Type For MBE 99.9999% Monocrystalline
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...Indium InAs or indium mono-arsenide is a semiconductor composed of indium and arsenic. It has the appearance of a gray cubic crystal with a melting point of 942°C. Indium arsenide is used to construct infrared detectors with a wavelength range of 1-3.8um. The detector is usually a photovoltaic photodiode......
SHANGHAI FAMOUS TRADE CO.,LTD
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2 RF Output Fiber Optic FTTH Mini Node With Power Adapter 4W Power Consumption
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... with aluminum shell. High sensitivity PIN photo-diode.High index full-imported gallium arsenic MMIC device are selected for RF amplifier circuit to ensure excellent performance index of the whole machine.It can be used together with ONU or EOC to realize ......
SHAANXI JIZHONG ELECTRONICS SCIEN-TECH CO.,LTD.
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