700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection
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VBE Technology Shenzhen Co., Ltd.
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650V-1200V IGBT Power Transistor For High Power Electronic Controls
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...Power Transistor IGBT For High-Power Electronic Controls Product Description: The High-Power IGBT is packaged in a TO-247 package type, which is ideal for high-power applications. It has a voltage rating of 650V-1200V and can operate at an application frequency of 20KHz-60KHz, making it suitable for various applications. One of the key features of the High-Power......
Guangdong Lingxun Microelectronics Co., Ltd
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FREESCALE FDMS86300 N-Channel MOSFET Transistor for High Power Reliable and Efficient Power Electronics Applications
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FREESCALE FDMS86300 N-Channel MOSFET Transistor for High Power Reliable and Efficient Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - ......
Shenzhen Sai Collie Technology Co., Ltd.
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Load Switch Rf Power Transistor / PWM High Power Mosfet Transistors
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AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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RF Power Transistors BLC6G22-75 Power LDMOS transistor RF Power Transistors
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BLC6G22-75 is a Power LDMOS transistor. Part NO: BLC6G22-75 Brand: Date Code: 07+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in ......
Mega Source Elec.Limited
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MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4
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MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile ......
Shenzhen Koben Electronics Co., Ltd.
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PB Free NPN PNP Transistor TPS62141RGTR Power LDMOS Transistor
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NPN PNP Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light ......
Yingxinyuan Int'l(Group) Ltd.
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BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor
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...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High power...
Wisdtech Technology Co.,Limited
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Charging Pile High Power IGBT Transistor Multipurpose For OBC
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...High Power IGBT High Power Insulated Gate Bipolar Transistor (IGBT) is a high voltage device used in many applications, such as on-board chargers, welding machines, switching power supplies, photovoltaic inverters, energy storage, and more. With a current density of 400A/cm² and a faster switching speed, High Power IGBT offers a reliable and efficient solution for these applications. High Power......
Reasunos Semiconductor Technology Co., Ltd.
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2SB1151-Y Low Collector Saturation Voltage Large Current High Power Mosfet Transistors
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2SB1151-Y LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT high power mosfet transistors FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETER SYMBOL RATINGS ......
Anterwell Technology Ltd.
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