SMD ON 2SD1623 SOT-89 Electronic Components General Purpose And Low VCE Transistors
|
#detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:405.95399188092017px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root .magic-2{margin-top:0;margin-left:0;width:......
ShenZhen QingFengYuan Technology Co.,Ltd.
|
PBSS5350T,215 PNP Transistor 40V Voltage 3A Current Low Vce(sat) High Efficiency SOT-223 Package Halogen-Free Pb-Free Robust Performance for Power Switching and Amplification
|
...Transistor 40V Voltage 3A Current Low Vce(sat) High Efficiency SOT-223 Package Halogen-Free Pb-Free Robust Performance for Power Switching andamp; Amplification andnbsp; Features andbull; Low collector-emitter saturation voltage VCEsat and corresponding low......
TOP Electronic Industry Co., Ltd.
|
High Power MOSFET NUS5530MN Integrated with PNP Low VCE(sat) Switching Transistor
|
... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has...
Sunbeam Electronics (Hong Kong) Limited
|
IRG4BC20FDPBF IGBT Power Module 600 V High Current Ultra Low VCE(Sat)
|
...a variety of applications. This module features an insulated-gate bipolar transistor (IGBT) with a freewheeling diode. It is capable of delivering high current control, high switching speeds, and low power losses. With its wide range of operating voltages,...
Shenzhen Sai Collie Technology Co., Ltd.
|
7MBR75UB120-50 IGBT MODULE (U series) 1200V / 75A / PIM Low VCE(sat) Compact Package
|
IGBT MODULE (U series) 1200V / 75A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe ......
Anterwell Technology Ltd.
|
MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
...LOW POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.. Low Noise - 2.5 dB @ 500 MHZ High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Applications: Designed for high current, low power, low......
Mega Source Elec.Limited
|
Small P Channel Mosfet High Side Switch / Low Power Transistor Long Life
|
Small P Channel Mosfet High Side Switch / Low Power Transistor Long Life General Description The AOD413A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent thermal resistance of the DPAK ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
Multiscene 20V Mosfet Low Voltage , 5G Base Station Low Power Transistor
|
5G Base Station Low Voltage MOSFET with SGT Process Low Power Loss *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg......
Reasunos Semiconductor Technology Co., Ltd.
|
IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF
|
...Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. •...
DELI ELECTRONICS TECHNOLOGY CO.,LTD
|
IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF
|
...Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. •...
ChongMing Group (HK) Int'l Co., Ltd
|