SIHP22N60E GE3 MOSFET Power Electronics 600V High Efficiency Switching Solutions
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SIHP22N60E-GE3 MOSFET Power Electronics High Performance High Efficiency Switching Solutions FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, ......
Shenzhen Sai Collie Technology Co., Ltd.
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IRFPC60PBF Mosfet Power Transistor 600V 16A Through Hole TO-247-3
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...MOSFET TRANSISTOR N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs......
Shenzhen Koben Electronics Co., Ltd.
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10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor
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...MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS = 30V,ID =10A RDS(ON) < 16m Ω@ VGS=10V P-Channel VDS = -30V,ID = -9A RDS(ON) < 37mΩ@ VGS=-10V High power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS
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...MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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STW48NM60N Transistors Integrated Circuit Ic MOSFET N-CH 600V 44A 3 Pin TO-247 Tube
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STW48NM60N Transistors MOSFET N-CH 600V 44A 3-Pin(3+Tab) TO-247 Tube General Description : This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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SSS7N60B 600V N-Channel MOSFET power mosfet ic Field Effect Transistor
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... tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology....
Anterwell Technology Ltd.
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STIB1560DM2-Z Automotive IGBT Modules High-Performance 3-Phase 600V MOSFET Power Driver Module
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...600V MOSFET Power Driver Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic......
ShenZhen Mingjiada Electronics Co.,Ltd.
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IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET
![China IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET on sale](https://img.burrillandco.com/nimg/f2/9d/b4922e2036207289a4eaa0c5b6de-300x300-0/irfbc30_dual_power_mosfet_power_mosfet_transistor_n_channel_600v_1_8_ohm_to_220_powermesh_ii_mosfet.jpg "China IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET on sale")
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IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET TYPE VDSS RDS(on) ID IRFBC30 600 V < 2.2 Ω 3.6 A TO-220 ■ TYPICAL RDS(on) = 1.8 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ VERY LOW INTRINSIC CAPACITANCES ■ GATE ......
ChongMing Group (HK) Int'l Co., Ltd
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High Power MOSFET NTMFD1D4N02P1E MOSFET, Power, 25V Dual N-Channel Power Clip
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... sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a...
Sunbeam Electronics (Hong Kong) Limited
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MBRF30100VT+ Diode Triode Transistor Mosfet Array Ic 600V 15A To247
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...Mosfet Diode Array 600V 15A To247 MBRF30100VT+ Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor Polarity: N-Channel Product Type: MOSFET......
ShenZhen QingFengYuan Technology Co.,Ltd.
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