MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PD
|
MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PD High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBT4401LT1 SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT4401LT1G (Pb−Free) 3,000 / Tape & ......
ChongMing Group (HK) Int'l Co., Ltd
|
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
|
... . The QM4803D meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
P4NK60ZFP Power Mosfet Transistor high power mosfet transistors
|
Stock Offer (Hot Sell) Part No. Quantity Brand D/C Package MAX191BCWG+ 2338 MAXIM 16+ SOIC-24 MAX1932ETC+T 3044 MAXIM 13+ QFN MAX232EIDR 50000 TI 13+ SOP-16 MAX232IDW 9003 TI 11+ SOP-16 MAX253CSA+ 6562 MAXIM 14+ SOP-8 MAX3051EKA+T 3853 MAXIM 14+ SOT-23 ......
Anterwell Technology Ltd.
|
FDMS86250 Mosfet Transistor High Power Low Loss High Reliability
|
...MOSFET Power Electronics The FDMS86250 is a MOSFET power electronic device designed to provide high performance and reliable operation in a wide range of applications. It offers extremely low on-resistance, fast switching speed, and excellent temperature performance. It is optimized for use in high frequency switching applications and can handle currents up to 25A. Features: - High......
Shenzhen Sai Collie Technology Co., Ltd.
|
N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A
|
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power......
Beijing Silk Road Enterprise Management Services Co.,LTD
|
600V 105 MOhm Typ. 26A N Channel Power Mosfet , Single High Power Transistor
|
Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Categories Mosfet Power Transistor...
Shenzhen Weitaixu Capacitor Co.,Ltd
|
RC Hobby Mosfet Waterproof High Power ESC 22S 400A 100V With 12 Months Warranty
|
RC Hobby Mosfet Waterproof High Power ESC 22S 400A With 12 Months Warranty Basic information: Voltage Current Size(mm) weight(g) BEC (Volts/Amps) Box Programming support Computer Programming support Firmware update 3-22S 400A 120*64*38mm 700g OPTO Yes Yes ......
Shenzhen Flier Electronic Co., Ltd.
|
BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor
|
...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High power...
Wisdtech Technology Co.,Limited
|
N-Ch 650V 47A Mosfet Transistor High Efficiency TO247-3 CoolMOS C3 SPW47N60C3
|
... (Eoss) @400V Low gate charge (Qg) Fieldproven CoolMOS™ quality CoolMOS™ technology has been manufactured by Infineon since 1998 Benefits: High efficiency and power...
Shenzhen Hongxinwei Technology Co., Ltd
|
Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors
|
...
VBE Technology Shenzhen Co., Ltd.
|
