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Power Electronics Sic Silicon Carbide Wafer

1-10 Results for

power electronics sic silicon carbide wafer

from 43 Products

2sp 4H-SEMI 4H-N SIC Silicon Carbide Wafer 10 X 10 X 0.5mm

China 2sp 4H-SEMI 4H-N SIC Silicon Carbide Wafer 10 X 10 X 0.5mm on sale
... performance power electronics continues to grow. To meet the needs for improved semiconductor performance, device manufacturers are looking to wide bandgap semiconductor materials, such as our 4H SiC Prime Grade of 4H n -type silicon carbide (SiC) wafers....
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers MPD or Dummy Grade

China 4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers MPD or Dummy Grade on sale
...SiC Silicon Carbide Wafers MPD or Dummy Grade Introduction of 3C SiC Wafer: Compared to 4H-Sic, although the bandgap of cubic silicon carbide (3c Sic, belong to beta Sic) is lower, its carrier mobility, thermal conductivity, and mechanical properties are better than those of 4H-Sic, Moreover, the defect density at the interface between the insulating oxide gate and 3c-sic......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

On-Axis 6H N Type SiC(Silicon Carbide) Wafer, Production Grade,Epi Ready,2”Size

China On-Axis 6H N Type SiC(Silicon Carbide) Wafer, Production Grade,Epi Ready,2”Size on sale
...SiC(Silicon Carbide) Wafer, Production Grade,Epi Ready,2”Size PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)waferfor electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device on sale
... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it...
Shenzhen A.N.G Technology Co., Ltd

Address: Room421, Fuquan Bldg A, Qingquan Road, Longhua District, Shenzhen,China 518109

Abrasive Black Sic Silicon Carbide For Grinding

China Abrasive Black Sic Silicon Carbide For Grinding on sale
... over traditional silicon-based power chips in terms of power semiconductors: silicon carbide can withstand larger currents and voltages, higher switching speeds, smaller energy losses, and higher temperature resistance. Therefore, the power module made of...
Zhenan Metallurgy Co., Ltd

Address: Huafu Commercial Center, Wenfeng District, Anyang City, Henan Province, China

Stable Converter SiC Power Mosfet , ISO Silicon Carbide SiC Power Semiconductors

China Stable Converter SiC Power Mosfet , ISO Silicon Carbide SiC Power Semiconductors on sale
...Silicon Carbide MOSFETs (SiC Metal-Oxide-Semiconductor Field-Effect Transistor) are high-power and high-efficiency devices with a high frequency and low resistance. They are based on the national military standard production line, making the process stable and reliable. Silicon Carbide MOSFETs are composed of a Silicon Carbide and Metal Oxide Semiconductor Field Effect Transistor. They are designed to handle high power...
Reasunos Semiconductor Technology Co., Ltd.

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

High Hardness Bulletproof Plates , SiC / Silicon Carbide Ballistic Plate

China High Hardness Bulletproof Plates , SiC / Silicon Carbide Ballistic Plate on sale
... are widely used in refractory melting ,papermaking, chemical, electronics, pharmaceutical and other ink jet, lithium battery materials, electronic pulp nano-ceramic sanding machines. Contact me for more details: Vivian Jiang International Marketing and...
China Hunan High Broad New Material Co.Ltd

Address: No.70 Chezhan North Road,Changsha,Hunan,China

1625°C Scr Type Sic Silicon Carbide Heating Elements For Sic Muffle Plant

China 1625°C Scr Type Sic Silicon Carbide Heating Elements For Sic Muffle Plant on sale
...Silicone Type Air Heater Key Selling Points Long Service Life Power Source Electric Material SIC/silicon Place of Origin China Shape Straight type, U type, W type and etc. SiC Content above 99% Tube Diameter 8mm to 65mm Weight 1KG Product name Silicon Carbide......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Address: No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China

2.8 g/cm3 SIC Silicon Carbide Graphite Electrode 200-700mm For EAF Arc Furnace

China 2.8 g/cm3 SIC Silicon Carbide Graphite Electrode 200-700mm For EAF Arc Furnace on sale
Product Description Factory Price High Power 200-700mm Graphite Electrode, UHP Graphite Electrode for Eaf Arc Furnace Product Description Graphite Electrode is made of high-quality low ash materials, such as petroleum coke, needle coke and coal pitch.after......
Zhengzhou Annec Industrial Co., Ltd.

Address: Industrial Cluster Area of Xinmi City, Henan Province,China.

SIC Silicon Carbide Brush Making Machine For Abrasive Filament

China SIC Silicon Carbide Brush Making Machine For Abrasive Filament on sale
Brush Making Machine For Nylon SIC Silicon Carbide Diamond Abrasive Filament Product Description: 1. Extruder: 1 set (1) Main motor power: 45KW; Motor is from Siemens electric machine Co., Ltd (2) Screw diameter: 42mm; Rotation speed: 0~70rpm (3) Screw ......
Changzhou Leap Machinery Co., Ltd.

Address: No.395 Changting Road, West Taihu Lake Science and Technology Industrial Park Changzhou, Jiangsu, China

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