PTFA082201E V1
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..., please refer to the data sheet, such as PDF files Docx documents, etc. We have PTFA082201E V1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ......
Rozee Electronics Co., Ltd
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PTFA082201E V1
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RF Mosfet 30 V 1.95 A 894MHz 18dB 220W H-36260-2...
Beijing Silk Road Enterprise Management Services Co.,Ltd.
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PTFA082201E V1
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RF Mosfet 30 V 1.95 A 894MHz 18dB 220W H-36260-2...
Beijing Silk Road Enterprise Management Services Co.,LTD
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Durable power MOSFET GREENMICRO GM4N60GT with low leakage current and fast switching characteristics
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...MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is suitable for use in power supplies, PWM motor controls, high-efficiency DC to DC converters, and bridge circuits.Product Attributes Brand: GREENMICRO Product Model: 4N60 Revision: V1...
Hefei Purple Horn E-Commerce Co., Ltd.
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F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors
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...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power...
Shenzhen Hunt Electronics Co., Ltd
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FDI045N10A N Channel Power MOSFET 100V164A 4.5mΩ High Power
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High Power MOSFET FDI045N10A N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ High Power MOSFET FDI045N10A N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors ......
Sunbeam Electronics (Hong Kong) Limited
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IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET
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IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ......
Shenzhen Retechip Electronics Co., Ltd
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IRF640NPBF Power Mosfet Transistor general purpose mosfet HEXFET Power MOSFET
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...HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description Fifth Generation HEXFET® Power MOSFETs from ......
ChongMing Group (HK) Int'l Co., Ltd
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STP100N8F6 Audio Power Mosfet N Channel 80 V 0.008 Ohm Type 100 A StripFET F6
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...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power...
Shenzhen Weitaixu Capacitor Co.,Ltd
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2N60 2A, 600VN-CHANNEL POWER MOSFET
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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits....
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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