Si Doped Undoped Laser Device Gallium Nitride Wafer
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...wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane) GaN Wafer Characteristic III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride...
SHANGHAI FAMOUS TRADE CO.,LTD
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N Type 4inch Dia100mm Free Standing HVPE GaN Gallium Nitride Wafer
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... several types of devices; the primary GaN devices are LEDs, laser diodes, power electronics, and RF devices. GaN is ideal for LEDs because of the direct bandgap of 3.4 eV which is in the near UV spectrum. GaN can be alloyed with InN and AlN, which have...
SHANGHAI FAMOUS TRADE CO.,LTD
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CGH40010F GaN IC 10W RF Power Gallium Nitride High Electronmobility Transistor
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CGH40010F GaN IC 10W RF Power Gallium Nitride High Electronmobility Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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10*10mm2 Undoped Epigan On Sapphire Substrates For Gallium Nitride Devices
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...gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Gallium Nitride On Sapphire Semiconductor GaN 100mm
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Gallium Nitride on Sapphire Wafers (GaN) We grow are sapphire wafers using several methods Czrochroski (CZ) process is known to be more efficient for c-axis sapphire substrate production. Heat Exchanger Method (HEM) - ......
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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7W Gallium Nitride RF Power Transistor with Wide Bandwidth DC to 7.2GHz
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INNOTION 7W 28V Gallium Nitride RF Power Transistor YP601238T with High Efficiency Gain and Wide Bandwidth DC to 7.2GHz Product Description Innotion’s YP601238T is a 7-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) ......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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Lanthanum Gallium Silicate Wafers Piezoelectric Crystal For BAW And SAW Devices
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Lanthanum Gallium Silicate Langasite Wafers Piezoelectric Crystal For BAW And SAW Devices Lanthanum Gallium Silicate (Langasite-LGS) is promising new and excellent piezoelectric crystal for BAW and SAW devices due to its excellent spectroscopic and ......
Hangzhou Freqcontrol Electronic Technology Ltd.
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Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt
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VBE Technology Shenzhen Co., Ltd.
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Universal 65W GaN PD Wall Charger Mini PD QC Fast Charging EU Plus Gallium Nitride Charger
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Mini PD QC Fast Charging 65W GaN Wall Charger EU Plus Universal Charger Products Features 1, The macebook will be changed full about 90 minuties 2, High efficiency charging& Low heat dissapation 3, Smaller size, only want 35. 7* 35. 7* 52mm 4, Full ......
Shenzhen Hosing Technology Development Co., Ltd.
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SI type SiC ingot manufacturer sell semi-insulating sic wafer
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...wafer HMT as the leading supplier and manufacturer of SiC ingot, our SiC crystal ingot have 4 inch and 6 inch with N type and SI type. Quality SiC Substrate Supplier & Manufacture in China, Contact Now! Quality Assurance. Semi-insulating silicon carbide substrates are mainly used in gallium nitride rf devices......
Homray Material Technology
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