2SC5508-T2B NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION led circuit board
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2SC5508-T2B NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19......
ChongMing Group (HK) Int'l Co., Ltd
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RF Microwave Components Low Noise Amplifier Gain 28dB 3.1GHz 3.5GHz
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3.1 3.5GHz Low Noise Amplifier,Gain 28dB, SMA connector Electrical Specifications Frequency Range 3.1 – 3.5GHz Gain 28±0.6dB Gain Flatness ≤±0.6dB Noise Figure 0.7dB typ., ≤0.9dB VSWR ≤1.40 P-1dB ≥+7dBm Input Power ≤20dBm Phase Match ≤±8.0° Power Supply +......
Chengdu Zysen Technology Co., Ltd.
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1-3000MHz 2.4GHz 20dB 0.01-2000MHz 2Ghz 32dB LNA RF Wideband Broadband Low Noise Power Amplifier Module UHF HF VHF
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Electrical Characteristics: 1.6W RF AMPLIFIER (500MHZ/30DB) 1. Product application: BROADBAND RF POWER AMPLIFICATION, SUITABLE FOR ALL KINDS OF RADIO APPLICATIONS, SHORT-WAVE FM REMOTE CONTROL TOYS RADIO WALKIE-TALKIE, DATA RADIO, ETC., INPUT 1 MILLIWATT (......
Zhangjiagang RY Electronic CO.,LTD
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Custom Made Rf Power Amplifier Module , Ultra Low Noise Rf Amplifier 40 50 60dB Gain
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2GHz , S-Band , Low Noise Amplifier LNA , RF Power Amplifier Module VBE RF Power Amplifier Module Introductions: VBE provide solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio......
VBE Technology Shenzhen Co., Ltd.
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ZFL-500LN+ RF Amplifier Low Noise Amplifier, 0.1 - 500 MHz 50Ω
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... Supply Current: 60 mA Gain: 24 dB NF - Noise Figure: 2.9 dB Type: Low Noise Amplifiers Mounting Style: SMD/SMT Package / Case: Y460 P1dB - Compression Point: 5 dBm OIP3 - Third Order Intercept: ......
Wisdtech Technology Co.,Limited
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MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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...RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.. Low Noise - 2.5 dB @ 500 MHZ High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Applications: Designed for high current, low power, low noise......
Mega Source Elec.Limited
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CLA4603-085LF RF Diode Pin Single 45v 1.5 A 2 W 3-QFN 2x2 2Ohms
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... is developed for use as a passive receiver protector in wireless or other RF systems. The diode limiter features low-insertion loss and low distortion. The SKY16602-632LF Module is integrated into a single Micro Lead-frame (MLP) surface-mount package. The...
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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Dual 100mA Low Dropout Low Noise Rectifier Diode Micropower Regulator LT3023EMSE
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... to 20V ■ Stable with 1µF Output Capacitor ■ Stable with Aluminum, Tantalum or Ceramic Capacitors ■ Reverse Battery Protected ■ No Reverse Current ■ No Protection Diodes Needed ■...
Anterwell Technology Ltd.
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LNA module 0.1-20 GHz Wideband LNA P1dB 13 dBm RF Ultra Low Noise Amplifier for high-performance systems
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...high-performance RF amplifier designed for ultra-low noise operation across a broad frequency range from 0.1 GHz to 20 GHz. This amplifier is ideal for applications requiring wideband coverage and excellent signal integrity with minimal noise interference....
Nanjing Shinewave Technology Co., Ltd.
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HMC536LP2E RF Power Transistors High Performance Low Noise High Gain
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...RF Power Transistor High Performance Low Noise High Gain HMC536LP2E Power Transistor Product Description: The HMC536LP2E is a GaAs pHEMT MMIC power amplifier which operates between DC and 6 GHz. This amplifier is designed for applications such as point-to-point radios, point-to-multipoint radios and VSATs. Features: • Gain: 14.5 dB • Power Output: +28 dBm • P1dB: +26 dBm • Noise......
Shenzhen Sai Collie Technology Co., Ltd.
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