Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt
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VBE Technology Shenzhen Co., Ltd.
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Customized 30W Jammer RF Power Module Wide Band 5000-6000MHz For Signal Field
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... test by 24-28V,the band and power can get full .The module inner takes newest technology chips that operating it can emit signal effectively.Widely use in government,Large entertainment venues,Military Neighborhood.It become more and more significant in...
Shenzhen TeXin electronic Co., Limited
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SI4703-C19-GMR RF Power Transistor - Compact High Efficiency And Reliable Performance
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...RF Power Transistor Product Description: The SI4703-C19-GMR is an advanced RF power transistor designed using a high-voltage BiCMOS process. This device is suitable for high-power, high-efficiency, and low-noise applications in the HF and VHF bands. It features a wide bandwidth, high output power, and low noise figure. The SI4703-C19-GMR is suitable for use in a variety of RF applications including RF amplifiers, RF power...
Shenzhen Sai Collie Technology Co., Ltd.
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PTB20245 35 Watts, 2.1-2.2 GHz Wide-Band CDMA Power Transistor ERICSSON RF Power Transistors
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... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower ......
Mega Source Elec.Limited
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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High Efficiency 600-1020MHz 50W RF Power Amplifier UHF Band Amplifier Module for Military Communication
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... key features: Wide Frequency Range: Supports 600-1020MHz, suitable for broadcasting, public safety, and military communication. High Output Power: Delivers 50W (47dBm) output, enhancing signal transmission and coverage. High Gain: Provides over 40dB gain,...
Nanjing Shinewave Technology Co., Ltd.
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50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
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...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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RF 1 in 2 out wide band DIN Connector Hybrid Combiner 3dB Bridge Coupler
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RF 1 in 2 out wide band DIN Connector Hybrid Combiner 3dB Bridge Coupler Product Description: u Ultra wide-band, multi-section design u Flat response 698 to 4000 MHz u Minimal RF Insertion Loss u DIN(f)Connectors u Rugged, High Reliability, RoHS u Low Passive Intermodulation (PIM) u 500 Watt Average Main Line Power Frequency: 698 - 4000 MHz VSWR, all ports: 1.3:1 max Intermod., PIM: <-160 dBc using two +43 dBm tones Power......
Changsha Xingheda Technology Co., Ltd
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D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET
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...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power...
Wisdtech Technology Co.,Limited
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MDmesh DM6 High Voltage Mosfet , Enhancement Rf Power Transistor For LED Lighting
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Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode......
Shenzhen Weitaixu Capacitor Co.,Ltd
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