6inch Dia 150mm 350um Thickness 4H N Type SiC Substrate For SBD MOS Application
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... substrate Production Grade 2inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates 4H-N Type / Semi Insulating SiC Substrates 2inch 3inch 6inch Silicon Carbide Wafers what is SiC subatrate A SiC substrate refers to a wafer made of...
SHANGHAI FAMOUS TRADE CO.,LTD
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6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade
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...SiC) Substrates 4H and 6H Epi-Ready SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide(SiC) wafer N Type 6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic About Silicon Carbide (SiC)Crystal Shanghai Famous Trade Co., Ltd 150 mm SiC wafers offer device manufacturers a consistent, high-quality substrate for developing high-performance power devices. Our SiC substrates......
SHANGHAI FAMOUS TRADE CO.,LTD
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6H Or 4H SiC Substrate, N Type Or Semi-Insulating -Powerway Wafer
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...SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
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... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it...
Shenzhen A.N.G Technology Co., Ltd
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4 inch 4H-SI SiC wafer manufacturer SiC substrate supplier
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...SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device......
Homray Material Technology
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Optoelectronic Device SiC Wafer for Light Emitting Diodes
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... material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2...
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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Single Diodes MSC030SDA330B 30A SiC SBD SIC Integrated Circuit Chip TO-247-2 SiC Schottky
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...SiC SBD SIC Integrated Circuit Chip TO-247-2 SiC Schottky Product Description Of MSC030SDA330B MSC030SDA330B The silicon carbide (SiC) power Schottky barrier diode (SBD) , the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC030SDA330B device is a 3300 V, 30 A SiC SBD......
ShenZhen Mingjiada Electronics Co.,Ltd.
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650V Schottky Barrier Rectifier Diode SBD Anti Surge Heatproof High Power
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...SBD (SiC SBD) is a power discrete device, a kind of SBD rectifier diode, designed for high frequency and high temperature applications. It is distinctively characterized by its extremely low reverse recovery current and strong anti-surge current ability. Silicon Carbide SBD......
Reasunos Semiconductor Technology Co., Ltd.
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LED Substrate Grinding Wheels Metal Bonded Abrasives ISO14001
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...Substrate Application The grinding wheels for LED substrate are mainly used for back thinning of 2”, 4” and 6”LED epitaxial wafers. They can be used steadily on the Japanese, Korean and Taiwanese grinders with high performance. Workpiece: sapphire epitaxial wafer, SiC substrate epitaxial wafer, Si substrate epitaxial wafer. Material of workpiece: Synthetic sapphire, SiC......
China Abrasives Industry Hainan Corporation
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Dumbbell Sic Heating Elements Bone Shape Rod For Electric Heating Devices
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Dumbbell High Temperature SiC Heating Elements, Bone Shape Silicon Carbide Heating Rod up to 1400℃ Shape of SIC heating elements: Dumbbell (GC type). Selecting high purity green SiC powder, to ensure the best foundation for top quality. SiC tube is ......
Zhengzhou Brother Furnace Co.,Ltd
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