SD2941-10W Field Effect Transistor Transistors FETs MOSFETs RF Chip
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SD2941-10W Specifications Part Status Active Transistor Type N-Channel Frequency 175MHz Gain 15.8dB Voltage - Test 50V Current Rating 20A Noise Figure - Current - Test 250mA Power - Output 175W Voltage - Rated 130V Package / Case M174 Supplier Device Package M174 Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. SD2941-10W......
KZ TECHNOLOGY (HONGKONG) LIMITED
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PTF080101S LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ ERICSSON RF Power Transistors
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PTF080101S IS A LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ . Part NO: PTF080101S Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Mega ......
Mega Source Elec.Limited
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SI1000-E-GM2R RF Power Transistor - High Power Output Low Noise
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SI1000-E-GM2R RF Power Transistor Features: • 500-1000 MHz Operating Frequency Range • 28V Operating Voltage • 10W Output Power • 6 dB Gain • High Efficiency • Low Noise • Low Distortion • High Linearity Applications: • Mobile Base Stations • Professional ......
Shenzhen Sai Collie Technology Co., Ltd.
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CGH40010F GaN IC 10W RF Power Gallium Nitride High Electronmobility Transistor
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CGH40010F GaN IC 10W RF Power Gallium Nitride High Electronmobility Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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1-2 GHz L Band Optical Amplifier communication Module Psat 40dBm 10w RF power amplifier for Military and Defense
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...efficient amplifier designed to deliver high power and excellent performance within the L-band frequency range. Below are the detailed features and potential applications for this power amplifier: Key Features: Frequency Range: Operates within the 1 GHz to...
Nanjing Shinewave Technology Co., Ltd.
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5.8G 10W RF Power Amplifier Module 50Ω Input Output Impedance 2.5dB Noise Figure ≤-30dBc Harmonic Suppression
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.... With high performance Spurious Suppression of ≤-60dBc, Gain Flatness of ≤±0.5dB, Noise Figure of 2.5dB, Gain of 30 To 40dB and Output Power of 10 To 20W, our RF Jammer Module will meet your different needs....
VBE Technology Shenzhen Co., Ltd.
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SD2941-10W
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... to the data sheet, such as PDF files Docx documents, etc. We have SD2941-10W high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ......
Rozee Electronics Co., Ltd
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10W RF Power Amplifier GAN Digital Module for UAV with 10-600MHz Frequency and Anti-Interference Capability
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... provides exceptional anti-interference capabilities and is specifically engineered for LORA wireless and RF module integration. Key Features 10W RF power output for robust signal transmission Wide frequency range: 10-600MHz operation GaN (Gallium Nitride)...
Nengxun Communication Technology Co.,Ltd.
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STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor
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Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor Description The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz. It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package. It can support CW......
Sanhuang electronics (Hong Kong) Co., Limited
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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