High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device
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... wafers About Silicon Carbide (SiC)Crystal Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or...
SHANGHAI FAMOUS TRADE CO.,LTD
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6Inch Ultra-High Voltage SiC Epitaxial Wafer 100–500 μm For MOSFET Devices
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...SiC Epitaxial Wafer Main Introduction 6Inch Ultra-High Voltage SiC Epitaxial Wafer 100–500 μm For MOSFET Devices This product is a high-purity, low-defect silicon carbide (SiC) epitaxial layer with a thickness ranging from 100 to 500 μm, grown on a 6-inch N-type 4H-SiC......
SHANGHAI FAMOUS TRADE CO.,LTD
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4H Semi-Insulating SiC Wafer, Production Grade,3”Size
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.... We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices....
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Optoelectronic Device SiC Wafer for Light Emitting Diodes
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... material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2...
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
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... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it...
Shenzhen A.N.G Technology Co., Ltd
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4 inch 4H-SI SiC wafer manufacturer SiC substrate supplier
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...SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device......
Homray Material Technology
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SiC Trench Power MOSFETs Transistors IMW65R027M1H TO-247-3 Integrated Circuit Chip
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SiC Trench Power MOSFETs Transistors IMW65R027M1H TO-247-3 Integrated Circuit Chip Product Description Of IMW65R027M1H IMW65R027M1H is 650V CoolSiC M1 SiC Trench Power Device, N-Channel Single FETs MOSFETs Transistors. Specification Of IMW65R027M1H Part ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Industrial 1200V SiC Power Transistors , Stable High Voltage N Channel Mosfet
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...SiC MOSFETs) are an advanced type of power device, with high efficiency and excellent performance. SiC MOSFETs feature low on-resistance and high power capabilities, enabling reliable operation and superior switching performance. Based on the national military standard production line, the process is stable and the quality is reliable. The use of SiC MOSFETs...
Reasunos Semiconductor Technology Co., Ltd.
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Silicon Carbide SiC Cantilever Paddle In Diffusion Coating Of Silicon Wafers Key Component Of Semiconductor
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Product Description: Silicon carbide wafer boat is a wafer-growing device for wafers, which is made of silicon carbide materials.Wafer-growing device for wafers is the primary material in biology and semiconductor fields, whose quality and performance ......
Wuxi Special Ceramic Electrical Co.,Ltd
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Black Silicon Carbide As Refractory In Ceramic Production Sic
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...Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon. SiC......
Zhenan Metallurgy Co., Ltd
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