Solar Inverter Silicon Carbide MOSFET N Channel For Industrial
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High Power Silicon Carbide MOSFET Based On The National Military Standard Production Line *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } ......
Reasunos Semiconductor Technology Co., Ltd.
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4N-Channel Silicon Carbide MOSFETs MSCSM70TLM10C3AG Automotive IGBT Modules 700V
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... (Tc), Through Hole Module. Specification Of MSCSM70TLM10C3AG Part Number MSCSM70TLM10C3AG Technology Silicon Carbide (SiC) Configuration 4 N-Channel Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 241A (Tc) Rds On (Max) @ Id,...
ShenZhen Mingjiada Electronics Co.,Ltd.
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Silicon Carbide Sintering Furnace for Semiconductor Transistors And MOSFETs
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Silicon Carbide as a Semiconductor Semiconductor Transistors And MOSFETs Produced By Silicon Carbide Sintering Furnace Nearly every electronic item you encounter on a day-to-day basis contains semiconductors. They are found in everything from your ......
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
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Black Silicon Carbide As Refractory In Ceramic Production Sic
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...Silicon Carbide Is Used as a Refractory in Ceramic Production Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon......
Zhenan Metallurgy Co., Ltd
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110V-240V Silicon Carbide Rod 1600C SiC Heating Element For Gas Furnace
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... of silicon carbide rod. Silicon carbide rod is a nonlinear resistor with significant dispersion at room temperature. Type H-type Heating Zone Length 300mm-600mm Resistance 1.2Ω-5Ω ......
ZHENGZHOU SONGYU HIGH TEMPERATURE TECHNOLOGY CO.,LTD
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3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics
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...Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET......
SHANGHAI FAMOUS TRADE CO.,LTD
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IGBT Power Module FMH23N50E - Fuji Electric - N-CHANNEL SILICON POWER MOSFET
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Quick Detail: N-CHANNEL SILICON POWER MOSFET Description: N-CHANNEL SILICON POWER MOSFET Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Applications: Maintains both low power loss and low noise Lower RDS(on) characteristic More ......
Mega Source Elec.Limited
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Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF
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...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs......
Anterwell Technology Ltd.
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Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF
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... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are...
Guangzhou Topfast Technology Co., Ltd.
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MOSFET N CHannel Transistor IC Chip 1500V 2A TO-3P 2SK2225-80-E-T2 2SK2225-E
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MOSFET N-CH 1500V 2A IC Chip TO-3P 2SK2225-80-E-T2 2SK2225 Products Description: 1. Silicon N Channel MOS FET Silicon N Channel MOS FET, through hole N Channel 2A (Ta) 50W (Tc) TO 3PFM 2.Trans MOSFET N-CH Si 1.5kV 2A 3-PIN (3+Tab) TO 3PFM Tube 3.Suitable......
Shenzhen Res Electronics Limited
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