SiC Ingot Growth Furnace PVT HTCVD LPE Single Crystal SiC Boule Growth Furnace For 6inch 8inch SiC Wafers Product
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SiC Ingot growth Furnace PVT HTCVD LPE single crystal SiC Boule growth furnace for 6inch 8inch SiC wafers product SiC Ingot growth Furnace's abstract The SiC Ingot Growth Furnace is an advanced system engineered for the high-efficiency growth of single crystal SiC Boules used in the production of 6-inch and 8-inch SiC wafers. Utilizing versatile growth......
SHANGHAI FAMOUS TRADE CO.,LTD
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The SiC Ingot Growing Furnace Uses PVT, Lely TSSG And LPE Methods To Grow Large Size Crystals Of 4 Inch, 6 Inch And 8 Inch
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... focuses on growing large crystals in 4 ", 6 "and 8" sizes and achieves fast growth rates. Using cutting-edge technologies including PVT, Lely, TSSG and LPE, the design incorporates a precisely-regulated axial ......
SHANGHAI FAMOUS TRADE CO.,LTD
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1500C CVD SIC Epitaxy Growth Furnace for Silicon Carbide Growth in 1000*1000*1500mm Effective Space
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... susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the...
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
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99.95% Pure Wolfram Tungsten Crucible For Single Crystal Growth Furnace Sintered Tungsten Crucibles High Purity Tungsten
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... as pure tungsten. It is a crucial component of the thermal field for sapphire crystal development, the smelting of rare earths, the continuous melting of quartz, and the high temperature heat treatment furnace. Under 2600°C, it can be employed in...
Shaanxi Peakrise Metal Co.,Ltd
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Polished Tungsten Wolfram Crucible For Single Crystal Sapphire
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... Resistance For Single Crystal Of Sapphire 1. Product Details: Tungsten and molybdenum crucible, tungsten and molybdenum reflective thermal insulation screen, and tungsten heating element are the key components of single crystal growth furnace, which hav......
Fonlink Photoelectric (Luoyang) Co., ltd
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3”Size 4H Semi-Insulating SiC Epi Ready Wafer in Research Grade for Graphene Epitaxial Growth
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... industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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High Mechanical Magneto - Optical Crystal Gadolinium Gallium Garnet
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... to acting as a substrate for the growth of other carnet crystals. Crystro manufactures gadolinium gallium garnet in forms such as single crystals, ingots, boules, wafers in both standard and custom dimensions. We offer both polished (single or double...
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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High Purity Silicon Carbide Heating Elements Durable Furnace Ceramic Elements
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Product Specification Name SiC Heating Element Shape ED, SC, SCR, Dumbbell, U, W and other special shape Used temperature Up to 1700°C Production process Made into blank, silicided under high temperature and re-crystallized. When you inquiry, Please inform......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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0.2T-120T Electro Slag Remelting ESR Furnace with Single and Three Phase for Special Alloy Steel Production and 1 Year Warranty
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Eelectroslag Refining Furnace Electro Slag Remelting Furnace ESR The Ultimate Solution for Special Alloy Steel Production Electroslag refining furnace is a kind of special smelting equipment which uses the heat generated by the remelting current to melt......
Xi'an Abundance Metallurgical Equipment Co., Ltd.
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Vacuum Furnace Crucible Molybdenum Machined Parts ASTM B387 Standard
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...Single element Other elements Mo1 ≥99.95% ≤0.01% ≤0.05% TZM ≥99.95% ≤0.01% ≤0.05% MHC ≥99.95% ≤0.01% ≤0.05% M-La ≥99.95% ≤0.01% ≤0.05% Molybdenum Crucible Applications: Since molybdenum has melting point up to 2610 ℃, so molybdenum crucible is usually applied as containers in quartz glass melting furnace, sapphire single crystal growth...
Zhengzhou Sanhui Refractory Metal Co., Ltd.
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