SGT Industrial Low Voltage Power Mosfet , Stable Mosfet Low Gate Threshold Voltage
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Low Voltage MOSFET with Trench Process Advantages for Synchronous Rectification in Both Series and Parallel Configuration *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-......
Reasunos Semiconductor Technology Co., Ltd.
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IXTQ130N10T MOSFET High Power Low On Resistance and Low Gate Threshold Voltage for Optimal Performance
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...: TO-247 Product Description: The IXYS IXTQ130N10T is an N-channel MOSFET with a max drain source voltage of 100V and a max drain current of 130A. This device offers a low RDS(on) of 0.01 Ohm and is housed in a TO-247 package. It is designed for use in...
Shenzhen Sai Collie Technology Co., Ltd.
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High Durability Silicon Low Gate Threshold Voltage Mosfet TO-251
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...Low Gate Threshold Voltage Mosfet TO-251 Product Description: Our MOSFET is made of high-quality silicon material, ensuring its durability and reliability. It also has a lead-free status, meeting the RoHS standards for environmental protection. The MOSFET is available in three different packages: TO-251. This allows for flexibility in designing and implementing the component into various systems. With its low......
Guangdong Lingxun Microelectronics Co., Ltd
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UCC27524ADR IGBT MOSFET Door Gate Drivers AT91SAM9G10-CU CY8C24123A-24SXI PMIC ICs
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...-Drive Current • Independent-Enable Function for Each Output • TTL and CMOS Compatible Logic Threshold Independent of Supply Voltage • Hysteretic-Logic Thresholds for High Noise Immunity • Ability to Handle Negative Voltages (–5 V) at Inputs •...
Walton Electronics Co., Ltd.
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ZXMP6A13FTA 60V P-CHANNEL ENHANCEMENT MODE MOSFET low power mosfet
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... 60V P-CHANNEL ENHANCEMENT MODE MOSFET low power mosfet SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.400 ID =-1.1A FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • ......
ChongMing Group (HK) Int'l Co., Ltd
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS......
Beijing Silk Road Enterprise Management Services Co.,LTD
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SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS & Industrial Drives
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...MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS & Industrial Drives Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low......
TOP Electronic Industry Co., Ltd.
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Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage
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Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Features •OptimizedforhighperformanceSMPS,e.g.syncrec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249......
Shenzhen Weitaixu Capacitor Co.,Ltd
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Stw25n80k5 Power Switching Transistor 19.5a 800v 250w 40nC N Channel Ultra Low Gate
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...MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate......
Shenzhen Retechip Electronics Co., Ltd
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