4A 650V 880mΩ Super Junction Mosfet Low On Resistance HV Transistor
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...Super Junction Mosfet Low On Resistance HV Transistor N-channel Super Junction MOSFET Part No.:LCS65R1K0D Package:TO-252 MAIN CHARACTERISTICS ID:4A VDSS:650V RDSON-typ VGS=10V:880mΩ FEATURES • High Dense Super Junction Design • Excellent Gate Charge x RDS(ON) Product(FOM) • Ultra Low......
Guangdong Lingxun Microelectronics Co., Ltd
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Anti EMI Super Junction MOSFET Stable Ultra Fast Switching For PFC Circuit
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...Super Junction MOSFET is a power discrete device for LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, and New Energy Power Equipment. It is made by Multi-layer Epitaxy Process, which has excellent Anti EMI and Anti Surge Capabilities compared to Trench Process. It features an ultra-low Junction Capacitance and an ultra small package. Therefore, it is the ideal choice for SJ MOSFET, Super...
Reasunos Semiconductor Technology Co., Ltd.
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SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS & Industrial Drives
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...MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS & Industrial Drives Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low......
TOP Electronic Industry Co., Ltd.
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IRFR120NTRLPBF Common Power Mosfet High Performance And Low RDS(On)
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This listing is for one IRFR120NTRLPBF MOSFET Power Electronics. This is an N-channel enhancement mode silicon gate power field effect transistor. Features of the IRFR120NTRLPBF include: • Drain-Source Voltage: 60V • Continuous Drain Current: -11A • Power ......
Shenzhen Sai Collie Technology Co., Ltd.
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TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS
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MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ......
Anterwell Technology Ltd.
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General Purpose Transistor IXTH200N10T 200A 100V 5.4 Rds 550W Dc Dc Converters
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...Rds 550W Dc-Dc Converters Description Single MOSFET Die,N-Channel Enhancement Mode Avalanche Rated, Low Qg IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction......
Shenzhen Retechip Electronics Co., Ltd
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TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS
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MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ......
ChongMing Group (HK) Int'l Co., Ltd
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SIC Integrated Circuit Chip SCT011H75G3AG Power MOSFET Transistors 750V H2PAK-7
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... temperature rang is -55°C to 175°C, Very low RDS(on) over the entire temperature range. Specification Of SCT011H75G3AG Part Number: SCT011H75G3AG Package: H²PAK-7 Gate-Source Voltage: -10V To 22V Thermal Resistance, Junction-To-Ambient: 50 °C/W...
ShenZhen Mingjiada Electronics Co.,Ltd.
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SLH60R080SS MOSFET 600V47A N-Channne TO-247 FET New Original 68mΩ 290W
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...MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion Features 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V Low......
KZ TECHNOLOGY (HONGKONG) LIMITED
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HXY4616 30V Mosfet Driver Using Transistor 30v VDS 150℃ Junction Temperature
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configurationis ideal for low Input Voltage inverter applications. . N-......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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