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template gan epi wafer

from 18 Products

2 Inch Gallium Nitride Wafer Sapphire Template Epi Wafers

China 2 Inch Gallium Nitride Wafer Sapphire Template Epi Wafers on sale
...) epi wafers, we offer 2-6inch GaN on sapphire epi wafers for microwave electronics applications with a thickness of 2 on C-plane sapphire substrates 430um inch, 4 inch 520um, 650um and 6 inch 1000-1300um, the normal value of GaN buffer layer is 2-4um;...
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

4inch Dia100mm GaN Template NPSS FSS AlN Template AlGaN/GaN HEMT wafers

China 4inch Dia100mm GaN Template NPSS FSS AlN Template  AlGaN/GaN HEMT wafers on sale
...GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane) GaN Wafer Characteristic III-Nitride(GaN......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

4 inch GaN-on-Si epi wafer manufacturer for Power HEMT

China 4 inch GaN-on-Si epi wafer manufacturer for Power HEMT on sale
... on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers: 5G-related RF devices, such as power amplifier High-efficiency power electronics devices, such as power supplies, DC/DC ......
Homray Material Technology

Address: 苏州吴中区苏蠡路

10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier

China 10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier on sale
...GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China

500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade

China 500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade on sale
GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our ......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Address: No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China

Fully Automatic Wafer Tube Production Equipment 28 Baking Templates

China Fully Automatic Wafer Tube Production Equipment 28 Baking Templates on sale
Wafer Tube Production Equipment , Fully Automatic 28 Baking Templates , Stainless Steel Material . Wafer barrel production equipment One Motor drives all. One single motor synchronize the oven, batter pump and molds open & close actions using track and roller system. Easy to operate and maintain with a reliable production. Cone Ejection. Smooth cone ejection action by track and roller system. The hammer system ensure the wafer......
GUANGZHOU CITY PENGDA MACHINERIES CO., LTD.

Address: Factory No.56,Pacific Industrial District,XinTang,GuangZhou,The Peoples Republic of China

8 Inch Dia 200mm Sapphire Wafer 1.0mm 1sp For Epi - Ready Carrier

China 8 Inch Dia 200mm Sapphire Wafer 1.0mm 1sp For Epi - Ready Carrier on sale
8 Inch Dia 200mm Sapphire Wafer By 1.0mm Thickness 1sp For Epi - Ready Carrier Single crystal sapphire Al2O3 possesses a unique combination of excellent optical, physical and chemical properties. The hardest of the oxide crystals, sapphire Al2O3 retains......
Hangzhou Freqcontrol Electronic Technology Ltd.

Address: Room 1106, CIBC, No.198 Wuxing Rd, Hangzhou, P.R.China

GaN Templates 2 & 4 inch

China GaN Templates 2 & 4 inch on sale
...GaN Templates: Dimensions:Ф 50.8mm ± 0.1mm Thickness:4 µm, 20 µm; 4 µm Orientation:C-plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3 Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s Dislocation Density: Less than 5x108 cm-2 Substrate structure: GaN......
Chongqing Newsin Technology Co., Ltd

Address: Block 4, No. 5, Torch Ave, Jiulongpo District, Chongqing,400080 China

GaN Substrates

China GaN Substrates on sale
With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices......
JOPTEC LASER CO., LTD

Address: No.451 Huangshan Road, Hefei, Anhui, China

HT-BGW Glass Grinding Wheel For Gallium Arsenide GaN Wafer High Efficiency

China HT-BGW Glass Grinding Wheel For Gallium Arsenide GaN Wafer High Efficiency on sale
... selection of back grinding wheels. This particular grinding tool comes in two types: a silicon wafer back grinding wheel and an LED substrate back grinding wheel. Both of them can be used on different grinding machines made in Europe,America,Japan, and...
Zhengzhou Hongtuo Superabrasive Products Co., Ltd.

Address: 176#, The 7th Street, Economic & Technological Development Area. 450016, Zhengzhou, China

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