2SC2240 - GR TOSHIBA PNP Power Transistor Silicon NPN Epitaxial Type PCT Process
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New and Original Transistor 2SC2240-GR TOSHIBA Transistor silicon NPN epitaxial type (PCT process) Details , Pls Reference DataSheet Deli electronics tehcnology co ltd www.icmemorychip.com Email:sales3@deli-ic.com Skype:hkdeli881...
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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Toshiba TK7A90E N-Channel MOSFET 900V 7A TO-220-3
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...道模式: Enhancement 商标名: MOSVIII 封装: Tube 商标: Toshiba 配置: Single 下降时间: 15 ns 高度: 15 mm 长度: 10 mm 产品类型: MOSFETs 上升时间: 20 ns 系列: TK7A90E 工厂包装数量: 50 子类别: Transistors 晶体管类型:...
HK NeoChip Technology Limited
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2SC5589 Toshiba 200kHz Mosfet Power Transistor For Switching
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...Toshiba Mosfet Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 works from a 3.0V to 36V input voltage range, and provides up to 4A of continuous output current. The output voltage is adjustable from 30V down to 0.8V. The AOZ1284 integrates an N-channel high-side power......
Shenzhen ATFU Electronics Technology ltd
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4 X 400W AB Class Stereo Power Amplifier 3U With TOSHIBA Power Transistors
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...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good quality MA Series Power Amplifier Mid-high level amplifier with remarkable performance and reliability we are famous are. High fidelity, Perfect circuit design and high efficient power transistors with fast recovery power...
Guangzhou Nova Acoustics Co., Ltd.
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Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module
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Toshiba IGBT Power Module MG200Q1US51 Transistor Module MG200Q1US51 Product Description Manufactured by: Toshiba America, Inc. Part number: MG200Q1US51 Part Category: Transistors Description: 300A, 1200V, N-CHANNEL IGBT Collector-Emitter Voltage: 1200V Gate-Emitter Voltage: 20V Collector Current (DC): 300A Forward Current: (DC): 200A Collector Power......
Guangzhou Sande Electric Co.,Ltd.
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Mosfet Power Transistor TPH2R306NH1
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... Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. They feature low on-resistance with proprietary technology using a Cu connector. They have a narrowed gate threshold ......
Shenzhen Retechip Electronics Co., Ltd
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2SK3478 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( PIE-MOSV )
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2SK3478 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV) ►Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) ►High forward ......
Anterwell Technology Ltd.
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VT130E1-4025BO TOSHIBA 1.5kw TRANSISTOR INVERTER
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... TRANSISTOR INVERTER Dimennsions 10.0cm x 11.0cm x 16.5cm Weight 0.85kg Product Details VT130E1-4025BO Specifications No. of occupancy I/O ......
MOORE AUTOMATION LIMITED
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AD9364BBCZ RF Power Transistors 200W High Performing Reliable Power Solutions
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AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ......
Shenzhen Sai Collie Technology Co., Ltd.
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MIG150J202HC - TOSHIBA - TOSHIBA Intelligent Power Module Silicon N Channel IGBT
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...TOSHIBA Intelligent Power Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z Outline : TOSHIBA......
Mega Source Elec.Limited
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