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transistor insulator

from 155 Products

GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR

China GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR on sale
IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • ......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode

China MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode on sale
... Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high ......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

QM10HB-H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE MITSUBISHI IGBT Power Module

China QM10HB-H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE MITSUBISHI IGBT Power Module on sale
QM10HB-H is a DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE. Part NO: QM10HB-H Brand: MITSUBISHI Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in ......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W

China STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W on sale
... Insulated Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors ......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode

China Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode on sale
G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ......
Shenzhen ATFU Electronics Technology ltd

Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031

FeNiCo Shell Robust 8pin To Transistor Packages Header

China FeNiCo Shell Robust 8pin To Transistor Packages Header on sale
....43um and Au≥1.3um;Cap is plated Ni:2~11.43um Product Formation Material Quantity 1. Base 4J29 1 2. Glass insulator BH-A/K 8 3. Pin 4J29 8 4 .Cap 4J42 1 Insulation Resistance 500V DC resistance between all the pins linked and base is ≥1...
JOPTEC LASER CO., LTD

Address: No.451 Huangshan Road, Hefei, Anhui, China

General Electric DS200IIBDG1AEA DS200IIBDG1A GE Insulated Gate Bipolar Transistor Board

China General Electric DS200IIBDG1AEA DS200IIBDG1A GE Insulated Gate Bipolar Transistor Board on sale
... that provide a status of the processing of the board. The LEDs are visible from the interior of the circuit board cabinet and are red in color when lit. The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A has several connectors and when you...
Joyoung International Trading Co.,Ltd

Address: FLAT 917A 9/F TOWER A NEW MANDARIN PLAZA NO14 SCIENCE MUSEUM RD TSIM SHA TSUI HONG KONG

GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel

China GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel on sale
GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs (max) • Low Saturation Voltage: VCE (sat) = 2.7 V (max) Characteristic Symbol ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD

Address: RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA

KUP40H12R4-7M Insulated Gate Bipolar Transistor Module Assembly for Power Management

China KUP40H12R4-7M Insulated Gate Bipolar Transistor Module Assembly for Power Management on sale
...Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic circuits, offering efficient power control and switching capabilities. This versatile module combines the features of an Insulated Gate Transistor......
Krunter Future Tech (Dongguan) Co., Ltd.

Address: RM 708, Building A, No.5 Keji No.2 Road, Songshan Lake, Dongguan, P.R.China

Stable Charging Pile Ultra Fast IGBT , Industrial Insulated Gate Bipolar Transistor

China Stable Charging Pile Ultra Fast IGBT , Industrial Insulated Gate Bipolar Transistor on sale
Product Description: High Power IGBT is a type of high power bipolar transistor, specifically a type of insulated-gate bipolar transistor (IGBT). It is an advanced semiconductor device with an excellent combination of low conduction losses, high switching ......
Reasunos Semiconductor Technology Co., Ltd.

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

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