IGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6A
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... low effective capacitances Improved transconductance Basic Data Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case:...
KZ TECHNOLOGY (HONGKONG) LIMITED
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Original MOSFET IGBT Diode Switching Transistor IC Chips MTB15P04J3 TO-252
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...MOSFET/IGBT/Diode Switching/Transistor IC Chips Small MOQ , Wholesale price , Fast delivery . Product details Type IGBT transistor Conditional New and original MOQ 10pieces SPQ 50 pieces PAYMENT T/T , PAYPAL ,WESTERN UNION,ALIPAY Shipment DHL . FEDEX , UPS , EMS , POST Product Keywords MTB15P04J3 all kinds of IGBT transistor......
Shenzhen Weitaixu Capacitor Co.,Ltd
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IR21094STRPBF SOP14 N Channel Power MOSFET IGBT Drivers
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IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS......
Shenzhen ATFU Electronics Technology ltd
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AO4486 SOP-8 N P channel field effect transistor (MOSFET) MOS tube
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AO4486 SOP-8 N P channel field effect transistor (MOSFET) MOS tube Specification Shipping: 1, We can shipping all over the world by DHL, UPS, FEdex, TNT and EMS. The packaging is very safe and strong. Please nitfy me you have any special needs 2, It will......
Shenzhen Sai Collie Technology Co., Ltd.
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Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor
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..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Original High Voltage Mosfet Power Transistor Mosfet Driver Using Transistor
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..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Beijing Silk Road Enterprise Management Services Co.,LTD
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MBRF30100VT+ Diode Triode Transistor Mosfet Array Ic 600V 15A To247
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...Transistor Mosfet Diode Array 600V 15A To247 MBRF30100VT+ Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor Polarity: N-Channel Product Type: MOSFET......
ShenZhen QingFengYuan Technology Co.,Ltd.
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D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET
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...TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET......
Wisdtech Technology Co.,Limited
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40N60 Transistor FGH40N60 Transistor FGH40N60SMD IGBT 40N60 Original TO-247 Field Stop 600V 80A
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Product Detail Packaging Tube Part Status Active IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A Power - Max 349W ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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Automotive IGBT Modules F4-17MR12W1M1H-B76 1200V 17mohm CoolSiC MOSFET IGBT Modules
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Automotive IGBT Modules F4-17MR12W1M1H-B76 1200V 17mohm CoolSiC MOSFET IGBT Modules [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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