Undoped 10X10mm M-Axis HVPE GAN Wafers For semiconducting
|
... several types of devices; the primary GaN devices are LEDs, laser diodes, power electronics, and RF devices. GaN is ideal for LEDs because of the direct bandgap of 3.4 eV which is in the near UV spectrum. GaN can be alloyed with InN and AlN, which have...
SHANGHAI FAMOUS TRADE CO.,LTD
|
2 Inch Undoped GaN On Sapphire Substrates For LEDs And Solid-State Lighting Tech
|
2 Inch Undoped GaN On Sapphire Substrates For LEDs And Solid-State Lighting Tech PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
|
Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC
|
...LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane) 4inch 2inch free-standing GaN substrates HVPE GaN Wafers GaN Wafer Characteristic III-Nitride(GaN,AlN,InN) Gallium Nitride is one...
SHANGHAI FAMOUS TRADE CO.,LTD
|
HT-BGW Glass Grinding Wheel For Gallium Arsenide GaN Wafer High Efficiency
|
... selection of back grinding wheels. This particular grinding tool comes in two types: a silicon wafer back grinding wheel and an LED substrate back grinding wheel. Both of them can be used on different grinding machines made in Europe,America,Japan, and...
Zhengzhou Hongtuo Superabrasive Products Co., Ltd.
|
Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor
|
...Silicon Wafer With High Resistivity For Semiconductor Silicon wafers are thin slices of pure crystalized silicon. These pure forms of wafers are normally called undoped or intrinsic silicon wafer. One of the reasons for using Silicon wafer in semiconductor......
Hangzhou Freqcontrol Electronic Technology Ltd.
|
GaN on Sapphire wafer manufacturer 2 Inch GaN Substrate
|
GaN on Sapphire wafer manufacturer 2 Inch GaN SubstrateAs the leading manufacturer of GaN substrate, Homray Material Technology provide GaN On Sapphire wafer. The size are 2inch and 4 inch. GaN layer thickness is 4.5um±0.5um or 20um±2um. @font-face{ font......
Homray Material Technology
|
350um ZnO Wafer CdS CdSe CdTe ZnS ZnSe Wafer And ZnTe Wafer
|
...Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer We provides high purity single crystal ZnO wafer and ZnO bulk for power device , LED , sensor and detector applications . With an ideal crystal structure , ZnO wafer ( Zinc oxide ) has a 2% lattice mismatch to GaN , that is much less than the lattice mismatch of sapphire wafer and SiC wafer . ZnO wafer is one of the most suitable substrate for using as GaN...
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
|
GaN Templates 2 & 4 inch
|
...GaN Templates: Dimensions:Ф 50.8mm ± 0.1mm Thickness:4 µm, 20 µm; 4 µm Orientation:C-plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3 Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s Dislocation Density: Less than 5x108 cm-2 Substrate structure: GaN......
Chongqing Newsin Technology Co., Ltd
|
GaN Substrates
|
With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices......
JOPTEC LASER CO., LTD
|
Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field
|
..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high performance. ......
SIGNI INDUSTRIAL (SHANGHAI) CO., LTD
|
Submit your “undoped gan wafer” inquiry in a minute :