Total 784 products for 200a switch disconnector Manufacture & Suppliers

• SF6 12KV RMU Expansion Module Gis Ring Main Unit ODM

  

  ...spring operating mechanism switch position indication, for all the switch function in the panel has a convenient installation of padlock device, SF6 gas pressure gauge, reserved bus extension, external bus, ...

  Knkong Electric Co.,Ltd

  Henan,China

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• DC Contactor New Energy Silver And Gold Contact Points Long Life

  

  ... to meet the GB14048 standard, ensuring that it meets all necessary safety requirements. With overall dimensions of 168.5*181*174, this switch is compact and can be easily installed in your equipment. It is ...

  JULUN (H.K)CO.,LTD (DONGGUAN JULUN ELECTRONICS CO.,LTD)

  Guangdong,China

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• Outgoing Line Manual Operation Mechanism

  

  ...safe external operation of outgoing line circuit breakers, load break switches, and disconnectors. It enables operators to perform on/off switching directly from the cabinet front panel without accessing liv...

  Jiangsu Changyun Intelligent Technology Co., Ltd

  Jiangsu,China

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• IGBT Power Module MG20G6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Spe...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG20G6EL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Spe...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG20G6EL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Spe...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG200H1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG200H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG200H1FL1A - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Spe...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG200H1JK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG200H2CK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG200H2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG200J1ZS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG200J2YS1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG200J2YS11- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG200J2YS40 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG200J2YS42 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG200J2YS45 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Switching Applications Motor Control Applications Applications: The electrodes are isolated from case. z High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG200M1FK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG200M1UK1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V ...

  Mega Source Elec.Limited

  China

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