| Sign In | Join Free | My burrillandco.com |
|
...transistor designed using a planar NPN silicon epitaxial bipolar process. It offers high power gain, excellent low-noise characteristics, and a wide dynamic range. Packaged in a SOT-323 surface-mount package...
...NPN silicon epitaxial bipolar transistor. It offers high power gain and low noise characteristics, making it ideal for high-density surface mount applications. Primarily used in VHF, UHF, and CATV high-frequ...
...NPN epitaxial transistor utilizing the PCT process. It is designed for audio frequency general-purpose amplifier applications. Key features include a small package (dual type), high voltage and current capab...
...NPN Epitaxial Planar Type transistor manufactured by TOSHIBA, utilizing the PCT process. It is designed for high-frequency amplifier applications, including FM, RF, MIX, and IF amplification. Key advantages ...
...NPN epitaxial planar type transistor utilizing the PCT process. It is designed for high-frequency amplifier applications, including FM, RF, MIX, and IF amplification. Key advantages include small reverse tra...
...NPN silicon transistor designed for power applications. It offers high breakdown voltage, high current gain, and high switching speed, making it suitable for various switching applications.Product Attributes...
...NPN Digital Transistor housed in a SOT-23 plastic package. It features built-in bias resistors, which simplify circuit design, reduce component count, and streamline the manufacturing process. This halogen-f...
...NPN digital transistor featuring built-in bias resistors (R1 = R2 = 4.7k). This integrated design simplifies circuit configuration, enabling inverter circuits without external input resistors and facilitatin...
NPN general purpose Transistor BC847AT/BT/CT FEATURES Ideally suited for automatic insertion. For switching and AF amplifier application. APPLICATIONS General purpose ......
...NPN bipolar junction transistor (BJT) designed for general-purpose applications. It is complementary to the S8550 transistor, offering a collector current of up to 0.5A. This transistor is suitable for vario...
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The LMUN2211LT1G Series represents a new generation of digital transistors designed to streamline circuit design by integrating a singl...
...replace single transistors and their external bias resistors, these devices simplify circuit design, reduce board space, and lower component counts. The BRT contains a single transistor with a series base re...
... Breakdown Voltage: 30 V Id - Continuous Drain Current: 40 A Fall Time: 2.4 Ns Transistor Type: 1 N-Channel Rds On - Drain-Source Resistance: 7.3 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - ......
TO-251-3L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN ) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta...
TO-251-3L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN ) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta...
Product Detail Packaging Bulk Part Status Obsolete Transistor Type NPN Current - Collector (Ic) (Max) 6A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, ......
Product Detail Packaging Bulk Part Status Obsolete Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, ......
Product Detail Packaging Bulk Part Status Obsolete Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, ......
Product Detail Part Status Obsolete Transistor Type NPN Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector...
Product Detail Series - Part Status Obsolete Transistor Type NPN Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - ...