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...transistor utilizing the PCT Process, designed for general-purpose audio frequency amplifier applications. It offers high voltage capability (VCEO = 120V), high and linear DC current gain (hFE), low noise (N...
... of 140V (min). This transistor is recommended for use in 100-W high-fidelity audio frequency amplifier output stages. Note: Continuous operation under heavy loads, such as high temperature, current, or volt...
... Transistor, model 2SA1943, is designed for high-performance power amplifier applications. It features a high collector voltage (VCEO = 230V min) and is recommended for the output stage of 100-W high-fidelit...
... transistor designed for Power Amplifier Applications. It features a high breakdown voltage of VCEO = -140 V (min) and is complementary to the 2SC5198. This transistor is recommended for the output stage of ...
...Transistors Bipolar (BJT) Transistor PNP 100V 6A 65W Features ■ Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity Applications ■ General purpo...
... of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages a...
Product Overview This is a Silicon Bipolar Epitaxial Planar NPN-PNP paired power amplifier transistor designed for high-fidelity audio amplifier pre-stage driving. It offers a large output current of up to 8A a...
... transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* Symbol Parameter Value Units VDG ......
...Transistor designed for high-fidelity audio frequency amplifier output stages. It is recommended for 100-W applications and offers a complementary pairing with the NJW0281G. Key features include a high colle...
...a Minos Silicon PNP Epitaxial Type transistor designed for Power Amplifier Applications. It serves as a complementary component to the 2SC5198 and is recommended for 100-W high-fidelity audio frequency ampli...
...TRANSISTOR The 2SC5200 is an NPN epitaxial silicon transistor from UNISONIC TECHNOLOGIES CO., LTD, specifically recommended for 100W high fidelity audio frequency amplifier output stages. It is complementary...
...Transistor Silicon NPN Epitaxial Type The TMBT3904 is a silicon NPN epitaxial transistor from TOSHIBA, designed for audio frequency general purpose amplifier applications. It offers high voltage and high cur...
...Overview The TOSHIBA 2SA1182 is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications...
...Transistor The 2SC4116 is a silicon NPN epitaxial transistor designed for low-frequency amplification, audio frequency general purpose amplification, and AM amplifier applications. It offers high voltage (VC...
...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain ......
...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain ......
...Amplifier Audio Module 6-12V Single Ic Audio Board TDA2030 Module Power Supply TDA2030 6-12V Single Amplifier Audio Board High-performance audio amplifier module featuring TDA2030A chip technology for reliab...
...delivers 20 watts into a 4Ω or 8Ω load on ±25V supplies. Using an 8Ω load and ±30V supplies, over 30 watts of power may be delivered. The amplifier is designed to operate with a minimum of external component...
...) technology. The resulting transistor shows good gain linearity behaviour. Features - High breakdown voltage VCEO = 140 V - Typical ft = 20 MHz - Fully characterized at 125 oC Product Category: Bipolar Tran...
2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Electrical Characteristics (Tc = 25C) Cha...