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Aln Substrates

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Total 454 products for aln substrates Manufacture & Suppliers

High Power 295nm UVB LED Chip 100mA LED SMD 3535 3.5*3.5mm

... 5-7V LED Diode size 3.5*3.5mm 3.5*3.5mm LENS Quartz Glass Quartz Glass View angle 120DEG 120DEG Substrate design ALN coppering ALN coppering...

Shenzhen Learnew Optoelectronics Technology Co., Ltd.
China

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Medical Phototherapy UVB LED Chip 315nm 0.5W 1W LED SMD

... 5-7V LED Diode size 3.5*3.5mm 3.5*3.5mm LENS Quartz Glass Quartz Glass View angle 120DEG 120DEG Substrate design ALN coppering ALN coppering...

Shenzhen Learnew Optoelectronics Technology Co., Ltd.
China

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1W 0.5W 3535 UVB CHIP LED

...SUBSTRATE JUNCTION TEMPERATURE LN-SMD3535UVB-P3D 3.0W 290-300nm 50-70mW 350mA (Max=500mA) 4-5V 3.5*3.5MM 120° QUARTZ GLASS LENS ALN Coppering 60-80C 300-306nm 306-310nm 310-315nm LN-SMD3535UVB-P3 3.0-5.0W 29...

Shenzhen Learnew Optoelectronics Technology Co., Ltd.
China

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High Power SMD 3535 UVC LED 270NM 280NM 0.5W UVC LED Chip For Air Water Disinfection

...SUBSTRATE Life span JUNCTION TEMPERATURE LN-SMD3535UVC-P0.5D 0.5W 265-285nm 6-8mW 40mA (max=50mA) 5-7V 3.5*3.5MM 120° QUARTZ GLASS LENS ALN Coppering LM70=3000Hrs LM50=6000Hrs 60C LN-SMD3535UVAC-P0.5 0.5W 26...

Shenzhen Learnew Optoelectronics Technology Co., Ltd.
China

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High Power Violet 3W 3535SMD UVC LED Diode 270nm 280nm Ultraviolet LED Chip For For Sterilization And Disinfection

...SUBSTRATE Life span JUNCTION TEMPERATURE CHIPS LN-SMD3535UVC-P3 3-5W 270-280nm 80-120mW 500-700mA 5-7V 3.5*3.5MM 120° QUARTZ GLASS LENS ALN Coppering LM70=5000Hrs LM50=10000Hrs 60C Flip Chip (PW or LG) 260-2...

Shenzhen Learnew Optoelectronics Technology Co., Ltd.
China

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Industrial Grade Insulation Ceramic Shims Square Shape Mo - Mn Base Layer

Electrical Insulation Metallized Alumina Ceramic Shim for Industrial Specification of ceramic metallised substrate: 1. Available material: Alumina(Al2O3), Aluminum nitride (AlN) and Beryllia (BeO) 2. Size capab...

Jinghui Industry Limited
Guangdong,China

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High Power Terminals 50 Ohm RF Chip Resistor Flange RIG 800W Flange Mount Terminations

.../℃ Product Features High power 50Ω RF termination solution Flange mount design for secure installation Aluminum Nitride (AlN)...

Kronz (guangzhou) Electronics Co., Ltd.
Guangdong,China

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Cooper Magnetron Sputtering Coating Machine, Ceramic chips Copper thin film deposition Equipment

...Substrate The DPC process- Direct Plating Copper is an advanced coating technology applied with LED / semiconductor / electronic industries. One typical application is Ceramic Radiating Substrate. Cooper con...

SHANGHAI ROYAL TECHNOLOGY INC.
China

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8 Inch AlGaN/GaN Gallium Nitride Wafer For Micro LED

... III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch

... III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Laser Projection Display Gallium Nitride GaN Wafer 350um Thickness

2inch free-standing GaN substrates,GaN wafer for LD,semiconducting Gallium Nitride Wafer for led,GaN template,10x10mm GaN substrates, native GaN wafer, III-Nitride(GaN,AlN,InN) Forbidden band width (light emitt...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Crystallized HVPE GaN Gallium Nitride Wafer For Laser Device

2inch free-standing GaN substrates,GaN wafer for LD,semiconducting Gallium Nitride Wafer for led,GaN template,10x10mm GaN substrates, native GaN wafer, III-Nitride(GaN,AlN,InN) Forbidden band width (light emitt...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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N Type 4inch Dia100mm Free Standing HVPE GaN Gallium Nitride Wafer

... electronics, and RF devices. GaN is ideal for LEDs because of the direct bandgap of 3.4 eV which is in the near UV spectrum. GaN can be alloyed with InN and AlN, which have...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Undoped 10X10mm M-Axis HVPE GAN Wafers For semiconducting

... electronics, and RF devices. GaN is ideal for LEDs because of the direct bandgap of 3.4 eV which is in the near UV spectrum. GaN can be alloyed with InN and AlN, which have...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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OEM 150W DC2.5GHz 9.55*5.7mm Chip Terminations RoHS

Chip Terminations 50Ω 150w DC- 2.5GHz BeO AlN Al2O3 9.55 * 5.7 (Standard Resistance):50Ω (Substrate Material):BeO, AlN,Al2O3 (Resistance Tolerance):± 5%(default)；±2%；±1% (Power Rating):5～500W (Temperature Range...

Shenzhen Yulongtong Electron Co., Ltd.
China

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10 Watt DC 18GHz 1.27*2.54mm Chip Termination 50 Ohm

... • 10 Watts • BeO Ceramic • Non-Nichrome Resistive Element • Low VSWR • 100% Tested Standard Resistance: 50Ω Substrate Material: BeO, AlN ,Al2O3 Resistance Tolerance: ±5%(default);±2%;±1% Power Rating: 10W F...

Shenzhen Yulongtong Electron Co., Ltd.
China

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5W DC 6GHz 1.27x2.54mm Chip Terminations Surface Mount

Chip Terminations 50�� 5w DC- 6GHz BeO AlN Al2O3 1.27 * 2.54 Standard Resistance: 50�� Substrate Material: BeO, AlN ,Al2O3 Resistance Tolerance: ��5%(default);��2%;��1% Power Rating: 5W Frequency: DC-6GHz VSWR: 1.25...

Shenzhen Yulongtong Electron Co., Ltd.
China

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RoHS 1.25 VSWR 80W DC 6GHz Chip Terminations 5mmx5mm

Chip Terminations 50Ω 80w DC-6GHz BeO AlN Al2O3 5*5 (Standard Resistance):50Ω (Substrate Material):BeO, AlN,Al2O3 (Resistance Tolerance):± 5%(default)；±2%；±1% (Power Rating):5～500W (Temperature Range):-55～+150℃...

Shenzhen Yulongtong Electron Co., Ltd.
China

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2.5x3mm 20w DC 12GHz Chip Terminations For Mobile Networks

... Military Instrumentation (Standard Resistance):50Ω (Substrate Material):BeO, AlN,Al2O3 (Resistance Tolerance):± 5%(default)；±2%；±1% (Power Rating):5～500W (Temperature Range):-55～+150℃ (Temperature Coefficie...

Shenzhen Yulongtong Electron Co., Ltd.
China

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Custom 100W DC 3GHz Electrode Resistance 8.9*5.7mm

electorde resisitance 50Ω 100w DC- 3GHz BeO AlN Al2O3 8.9 * 5.7 (Standard Resistance):50Ω (Substrate Material):BeO, AlN,Al2O3 (Resistance Tolerance):± 5%(default)；±2%；±1% (Power Rating):5～500W (Temperature Rang...

Shenzhen Yulongtong Electron Co., Ltd.
China

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