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...Transistor designed as a complementary device to the 2SC1815. It offers excellent HFE linearity, high voltage and current capabilities, and low noise performance. With a Collector-Emitter voltage (BVCEO) of ...
... power amplifier designed as a complementary pair with the 2SB647/A. It offers robust performance with high breakdown voltages and reliable DC current gain characteristics.Product Attributes Brand: JSMICRO S...
Product Overview The LMBT2222AWT1G is a general-purpose NPN silicon transistor designed for amplifier applications. It is housed in a low-power surface-mount SOT323/SC70 package.Product Attributes Brand: LESHAN...
Product Overview The L2SC3356LT1 is an NPN silicon epitaxial transistor specifically engineered for low-noise amplifier applications across VHF, UHF, and CATV bands. It offers excellent dynamic range and favora...
Product Overview The 2SD2226K is a general-purpose NPN transistor designed for low-frequency amplifier applications. It features high DC current gain, high emitter-base voltage, and low saturation voltage, maki...
Product Overview The TOSHIBA HN4C06J is a Silicon NPN Epitaxial Type transistor utilizing the PCT Process, designed for general-purpose audio frequency amplifier applications. It offers high voltage capability ...
Product Overview The UTC UD2195 is an NPN epitaxial planar silicon transistor designed for general-purpose amplifier and low-speed switching applications.Product Attributes Brand: UNISONIC TECHNOLOGIES CO., LTD...
Product Overview The 2SA1162 is a silicon PNP epitaxial transistor from TOSHIBA, utilizing the PCT process. It is designed for general-purpose amplifier applications in audio frequencies. Key advantages include...
Fin Heat Sink Aluminum Profiles Fiit Heatstick For Power Amplifier Transistor Details: 1. The heatsink made of high quality aluminum, good thermal conductivity. 2. Size: 20x6mm, 30x9mm 3. This aluminum heatsink...
Product Detail Packaging Bulk Part Status Obsolete Transistor Type NPN/PNP Current - Collector (Ic) (Max) 17A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 2V @ 800mA, 8A Curren...
Product Overview General Purpose Amplifier with Epitaxial planar die construction. Features high stability and high reliability. Available in SOT-23 plastic encapsulation.Product Attributes Case Style: SOT-23 M...
Product Overview The 2SA1943/2SC5200 are semiconductor discrete devices designed for low-frequency amplification. They offer high breakdown voltage, low leakage current, and superior frequency characteristics, ...
Product Overview High-Frequency Amplifier designed for various electronic applications. This device offers excellent performance characteristics, including high transition frequency and low noise factor, making...
Product Detail Packaging Bulk Part Status Obsolete Transistor Type NPN/PNP Current - Collector (Ic) (Max) 17A Voltage - Collector Emitter Breakdown (Max) 200V Vce Saturation (Max) @ Ib, Ic 2.5V @ 1A, 10A Curren...
Product Description Product Detail Packaging Tube Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 16A Voltage - Collector Emitter Breakdown (Max) 250V Vce Saturation (Max) @ Ib, Ic 4V @ 3....
Product Overview The 2SC3356-R25 is a Silicon Epitaxial Planar Transistor designed for low noise amplification in VHF, UHF, and CATV bands. It offers low noise figure (NF=1.1dB TYP.) and high gain (Ga=11dB TYP....
BCP54 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ra...
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