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...Transistor designed for high-frequency, low-noise amplifier applications. It offers low noise characteristics and high gain, with a power dissipation capability of 150mW. This transistor is suitable for dema...
...transistor encapsulated in a SOT-23 plastic package. It is designed for general-purpose amplifier applications and serves as a complementary type to the MMBTA06 NPN transistor. This component offers reliable...
...transistor designed for microwave low-noise amplifier applications. Manufactured using silicon epitaxial process technology, it offers high power gain, wide bandwidth, low noise, low leakage current, and sma...
...Transistor offers low collector saturation voltage and high DC current gain, ensuring high reliability and minimum lot-to-lot variations for robust device performance. It is suitable for applications includi...
...Transistor designed for switching and amplifier applications. It offers a range of DC current gain values depending on the operating conditions and features specific cutoff currents and breakdown voltages. T...
...Transistor designed for power amplifier and power switching applications. It features a low saturation voltage (VCE(SAT) = 0.5V Max.) and high-speed switching capabilities (TSTG = 1.0s Typ.). The transistor ...
...transistor designed for power amplifier and power switching applications. It features a low saturation voltage (VCE(sat) = -0.5 V max at IC = -1.5 A) and high-speed switching time (tstg = 0.2 s typ.). This t...
...TRANSISTOR The 2SC5200 is an NPN epitaxial silicon transistor from UNISONIC TECHNOLOGIES CO., LTD, specifically recommended for 100W high fidelity audio frequency amplifier output stages. It is complementary...
...PNP epitaxial transistor featuring excellent hFE linearity, high voltage capability (VCEO = -50 V min), and a complementary nature to the 2SC3325. It is designed for audio frequency low power amplifier appli...
...Transistor Silicon NPN Epitaxial Type The TMBT3904 is a silicon NPN epitaxial transistor from TOSHIBA, designed for audio frequency general purpose amplifier applications. It offers high voltage and high cur...
...Overview The TOSHIBA 2SA1182 is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications...
...Transistor The 2SC4116 is a silicon NPN epitaxial transistor designed for low-frequency amplification, audio frequency general purpose amplification, and AM amplifier applications. It offers high voltage (VC...
...transistor designed for low-frequency amplifier applications. It offers high hFE linearity and is the complementary counterpart to the 2SC945 transistor. This device is suitable for general-purpose amplifica...
..., and AM amplifiers. Key features include high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), excellent ......
...TRANSISTOR The D882SS is a medium power, low voltage NPN silicon transistor designed for applications requiring high current output up to 3A. It features low saturation voltage and is complementary to the B7...
...Transistor The TOSHIBA 2SC4541 is a high-performance silicon NPN epitaxial transistor designed for power amplifier and power switching applications. It features a low saturation voltage (VCE(sat) = 0.5 V max...
Product Overview NPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also availa...
2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Electrical Characteristics (Tc = 25C) Cha...
SZHUASHI 100% New YP40601625T 30W 50V 5700- 5900MHz PA Power Amplifier RF Power Transistor with Standard Features Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for mult...
KTD1047 NPN Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V ......