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...high current output up to 3A with low saturation voltage. It is a complement to the 2SB772SQ and is suitable for audio frequency power amplifier and low speed switching applications.Product Attributes Brand:...
Product Overview The TOSHIBA 2SC4207 is a silicon NPN epitaxial transistor utilizing the PCT process, designed for audio frequency general-purpose amplifier applications. It features a small package (dual type)...
...Overview The TOSHIBA 2SC4944 is a silicon NPN epitaxial transistor utilizing the PCT process. It is designed for audio frequency general-purpose amplifier applications. Key features include a small package (...
Product Overview The HN1C01F is a Silicon NPN Epitaxial Type transistor from Toshiba, utilizing a PCT process. It is designed for audio frequency general purpose amplifier applications and features a small pack...
... Silicon NPN Epitaxial Type The TMBT3904 is a silicon NPN epitaxial transistor from TOSHIBA, designed for audio frequency general purpose amplifier applications. It offers high voltage and high current capab...
...current gain and high breakdown voltage, making it suitable for general-purpose amplifier applications in audio frequency circuits.Product Attributes Brand: UNISONIC TECHNOLOGIES CO., LTD Material: NPN SILIC...
...2SA1162 is a silicon PNP epitaxial transistor from TOSHIBA, utilizing the PCT process. It is designed for general-purpose amplifier applications in audio frequencies. Key advantages include high voltage and ...
Specification: Power amplifier chip: TPA3118 Power amplifier power: 1*60W Power supply voltage: 8~24VDC Size: 46*35mm Contact: Tanky Email: tanky@zd_schottkysignaldiode.ecer.com Wechat: +86 13750005407 Skype: f...
Low Power LM324N DIP-14 Chip 4 Channel Operational Amplifier For DC Gain Blocks FEATURES Internally Frequency Compensated for Unity Gain Large DC Voltage Gain 100 dB Wide Bandwidth (Unity Gain) 1 MHz (Temperatu...
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CK Series CK Series The innovative SMPS circuit realizes extremely low power consumption and a wide power invisible range. The innovative operation guarantee protection can obtain output power from the power su...
6000 x1DF Type: class D Packing: packed in cartons 1 cubic commonly: 30 Length - width - height: 650 x260x55mm destination: shenzhen Weight: 15/17 KGS = 1 delivery time: 25 to 35 days A major repair parts: 5% 5...
Product Description 8 /stereo: 2 x 800 w 4 /stereo: 2 x 1000 w 2 /stereo: 2 x 1200 w 8 /bridge: 1200 w 4 /bridge: 1400 w stereo, single channel, bridge three working modes sensitivity 1Vrms, gain 32dB, 26d...
High power NPN epitaxial planar bipolar transistor d1047 b817 Product Description Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. T...
2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Electrical Characteristics (Tc = 25C) Cha...