Total 4861 products for block memory generator Manufacture & Suppliers

• SAMSUNG RECC Ecc Server Memory Bar 16G 32G 64G DDR4 2666

  

  ... 2nd Generation Intel® Xeon® Scalable processors, up to 28 cores per processor Memory 24 DDR4 DIMM slots, Supports RDIMM /LRDIMM, speeds up to 3200MT/s, 3TB max Up to 12 NVDIMM, 192 GB Max Up to 12 Intel® Op...

  Beijing Qianxing Jietong Technology Co., Ltd.

  Beijing,China

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• Integrated Circuit Chip MTFC128GASAONS-AAT 3.3 V Memory IC BGA Surface Mount

  

  ...Memory IC BGA Surface Mount Product Description Of MTFC128GASAONS-AAT MTFC128GASAONS-AAT 10% shorter latency than previous 96-layer generation for faster response times and a more reliable mobile experience....

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• ICs Chip High Performance MTFC128GAZAOTD-AIT FLASH Memory IC 153-TFBGA

  

  ... over previous 96-layer generation. Specification Of MTFC128GAZAOTD-AIT Part Number: MTFC128GAZAOTD-AIT Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 105 C Supply Voltage: 3.3V Memor...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• Integrated Circuit Chip MTFC64GAZAQHD-IT 512Gbit 200MHz 153-VFBGA Memory IC

  

  ...write capabilities. SLC NAND also offers fast boot times, excellent endurance, reliability, and with the latest generation of 25nm NAND, on-die ECC algorithms. Specification Of MTFC64GAZAQHD-IT Part Number: ...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• TFBGA-315 MT62F768M32D2DS-023 FAAT:C SDRAM Mobile LPDDR5 Memory IC 24Gbit Parallel

  

  ...Memory IC 24Gbit Parallel​ Product Description Of MT62F768M32D2DS-023 FAAT:C MT62F768M32D2DS-023 FAAT:C The LPDDR5 DRAM addresses these requirements with a 50% increase in data access speeds. The devices als...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• Nand Flash Memory IC Chip Power Management ICs MICRON MT29F32G08CBADBWP

  

  ...) 2.3-compliant1 Multiple-level cell (MLC) technology • Organization Page size x8: 8936 bytes (8192 + 744 bytes) Block size: 256 pages (2048K + 186K bytes) Plane size: 2 planes x 1064 blocks per...

  KZ TECHNOLOGY (HONGKONG) LIMITED

  China

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• Portable 7.5cm Velvet Fabric Camping Memory Foam Mattress Pad

  

  Memory Foam Camping Mattress For Tesla Model X/Y/3 Portable Sleeping Pad Space Saver 【Twin Size Camping Mattress】Two-person memory foam camping mattress suitable for Tesla Model X/Y/3. Suitable for self-driving...

  Union Win Industrial(China) Co., Ltd

  Guangdong,China

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• block shaped neodymium magnets arc shaped magnets segment NdFeb magnet for motor generator

  

  ...*Width*Thickness(MM/Inch) custom Coating: Zinc, Nickel, Ni-Cu-Ni, Gold, Epoxy, etc Shape: Block Magnetization: Thickness Direction Tolerance: +/-0.05mm Type: Permanent Max. Working temperature: 80° Neodymium...

  Shenzhen WIT Magnet Co.,Limited

  Guangdong,China

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• High powerful Block N40 magnet magnetic generator Sintered NdFeB Neodymium

  

  ...Block N40 magnet magnetic generator Sintered NdFeB Neodymium Detailed Product Description: Raw Material: Rare Earth Composition: NdFeb Magnet Grade: N35-N52 Size: Length*Width*Thickness(MM/Inch) custom Coati...

  Shenzhen WIT Magnet Co.,Limited

  Guangdong,China

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• large block neodymium permanent magnet for wind turbine, alternative energy generators

  

  ...*Width*Thickness(MM/Inch) custom Coating: Zinc, Nickel, Ni-Cu-Ni, Gold, Epoxy, etc Shape: Block Magnetization: Thickness Direction Tolerance: +/-0.05mm Type: Permanent Max. Working temperature: 80° Neodymium...

  Shenzhen WIT Magnet Co.,Limited

  Guangdong,China

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• MX30LF4G18AC-TI Flash Memory Chip High Performance Storage Solution

  

  ...Memory Chip High Performance Storage Solution MX30LF4G18AC-TI Flash Memory Chips Product Description: The MX30LF4G18AC-TI Flash Memory Chips from Macronix are ideal for a variety of applications that require...

  Shenzhen Sai Collie Technology Co., Ltd.

  China

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• MX29GL512FLXFI-10Q Flash Memory Chips High-Speed Secure Data Storage Solution

  

  ... • Access Time: 70ns • Flash Read and Program: 2.0V - 3.6V • Flash Block Erase: 2.7V - 3.6V • Supports x8 and x16 Bus Widths • Multi-Level Cell (MLC) and Single Level Cell (......

  Shenzhen Sai Collie Technology Co., Ltd.

  China

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• MX25L12835FM2I-10G High-Capacity Flash Memory Chips for High Performance Applications

  

  ...Memory Chips for High Performance Applications Product Listing: MX25L12835FM2I-10G Flash Memory Chips Features: - 128Mb Flash Memory - Quad SPI Interface - 3V Supply Voltage - 2.7V to 3.6V Read/Write Voltage...

  Shenzhen Sai Collie Technology Co., Ltd.

  China

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• S29GL032N90TFI040 Flash Memory Chip Storage and High-Speed Data Transfer

  

  ...Memory Chip Storage and High-Speed Data Transfer Product Listing: S29GL032N90TFI040 Flash Memory Chips Features: - 32-megabit (4Mb x 8) NOR Flash Memory - Standard S29GL032N90TFI040 Package - Fast access tim...

  Shenzhen Sai Collie Technology Co., Ltd.

  China

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• W25Q20EWBYIG Flash Memory Chips - Fast Reliable Storage for Your Electronics Needs

  

  ...Memory Chips - Fast Reliable Storage for Your Electronics Needs Product Title: Winbond W25Q20EWBYIG TR Flash Memory Chips Product Description: Winbond W25Q20EWBYIG TR Flash Memory Chips are a reliable and co...

  Shenzhen Sai Collie Technology Co., Ltd.

  China

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• MT25QL128ABA8E12-0AAT Memory IC Chip 128Mbit Non Volatile NOR Flash Memory IC TBGA24

  

  ... and page read from all blocks of the array. Specification Of MT25QL128ABA8E12-0AAT Part Number: MT25QL128ABA8E12-0AAT Erase Performance: 400KB/sec Program Performance: 2MB/sec ......

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• Integrated Circuit Chip MT29F2G08ABAEAWP-AATX:E Automotive NAND Flash Memory IC

  

  ...Memory IC​ Product Description Of MT29F2G08ABAEAWP-AATX:E MT29F2G08ABAEAWP-AATX:E is 2Gbit Parallel Automotive NAND Flash Memory Chip, package is 48-TSOP. Specification Of MT29F2G08ABAEAWP-AATX:E Part Number...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• 4Gbit Parallel MT29F4G08ABAFAH4-AAT:F Memory Chip 63-VFBGA Integrated Circuit Chip

  

  ... is 63-VFBGA (9mmx11mm). Specification Of MT29F4G08ABAFAH4-AAT:F Part Number: MT29F4G08ABAFAH4-AAT:F Operating Voltage Range – VCC: 2.7V–3.6V Memory Size: 4Gbit Mounting Style: SMD/SMT Organization: 512 M X ...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• IC Chips MT29F4G08ABAFAH4-IT:F 4Gbit Multiplexed NAND Flash Memory IC 63-VFBGA

  

  ... a cost-effective solution for applications requiring highdensity solid-state storage. Specification Of MT29F4G08ABAFAH4-IT:F Part Number: MT29F4G08ABAFAH4-IT:F Memory Interface: Parallel Random read: 25µs P...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• Parallel NOR Flash Memory IC MT28EW256ABA1LPC-0SIT Integrated Circuit Chip 64-LBGA

  

  ...Memory IC MT28EW256ABA1LPC-0SIT Integrated Circuit Chip 64-LBGA​ Product Description Of MT28EW256ABA1LPC-0SIT MT28EW256ABA1LPC-0SIT is an asynchronous, uniform block, parallel NOR Flash memory device. READ, ...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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