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Product Overview The 3DD4251T is a high-performance semiconductor device designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliab...
... Voltage of 120V (Min.), ensuring robust device performance and reliable operation with minimum lot-to-lot variations.Product Attributes Brand: ......
...Semiconductor 2SC2233 is a silicon NPN power transistor designed for high-performance applications. It features a high collector-emitter breakdown voltage of 60V(Min) and a DC current gain of 30(Min) at VCE=...
...vertical output applications. It features a wide area of safe operation, a collector-emitter breakdown voltage of 150V (Min), and serves as a complement to the 2SA940 type. The device offers minimum lot-to-l...
... of up to 8A and a high breakdown voltage of VCEO 250V. The device operates effectively in a wide area, supporting 1.8A/80V for 1 second, and boasts superior frequency characteristics with ......
...an NPN transistor in a SOT-23 package, designed for general-purpose amplification and switching applications. It offers a breakdown voltage of 40V (Collector-Base) and 25V (Collector-Emitter), with a continu...
Product Overview The YGW60N65F1A2 is a 650V / 60A Trench Field Stop IGBT designed for high-speed switching applications. It features high breakdown voltage for improved reliability, Trench-Stop Technology for h...
... Attributes Package: SOT-323Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO*...
Product Overview The 2SB1198K is a PNP silicon transistor of epitaxial planar type, designed for low-frequency applications. It features low VCE(sat) of 0.2V (Typ.) and a high breakdown voltage of BVCEO = 80V. ...
IMX8 Transistors Rev.A The IMX8 is a general-purpose transistor featuring dual 2SC3906K chips within an SMT package. It offers a high breakdown voltage and is suitable for use in ordinary electronic equipment s...
Product Overview This PNP transistor is designed for general-purpose applications. It features a high breakdown voltage, making it suitable for various electronic circuits. The device is available in a SOT-23 p...
... CO., LTD 2SD1857 is an NPN epitaxial silicon transistor designed for power transistor applications. It features a high breakdown voltage of 120V, low collector output capacitance (typically 20pF at VCB=10V)...
... (RETs) in a compact SOT23 (TO-236AB) surface-mounted plastic package. These transistors offer an 80 V breakdown voltage and a 100 mA output current capability, featuring built-in resistors that simplify cir...
... Transistors (RETs) in a compact SOT323 (SC-70) SMD plastic package. These transistors offer an 80 V breakdown voltage and a 100 mA output current capability, featuring built-in resistors that simplify circu...
...RETs) in a compact SOT23 (TO-236AB) surface-mounted plastic package. These devices offer an 80 V breakdown voltage and a 100 mA output current capability, featuring built-in resistors that simplify circuit d...
... capable, making it suitable for demanding automotive environments. This JFET features high forward transfer admittance, high breakdown voltage, low input capacitance, and low noise figure, with Pb-Free and ...
Ultra Fast High Voltage Diode Glass Passivated High Efficient Rectifier 300V 3A 2-Pin DO-201AD HER301~HER308 3.0Amp High Efficiency Silicon ......
SF51 Thru SF58 Ultra Fast Recovery Rectifiers Diode With DO-27 Package Free Samples Features: * Low forward voltage drop * High current capablity * High reliability * High surge current capability * Good for sw...
... with an automatic detection function, such as automatically entering the reset state when the machine is turned on to execute the voltage regulator back to zero; 2. A micro panel printer is used to automati...
... Number of Testing Breaker Single Time of Breakdown ≤10ms Standstill time (1~10) min (Adjustable) Temperature Range (-40.0~80.0)℃, Accuracy: ±0.5℃ Humidity Range (0~90.0)%RH, ......