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...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......
...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......
...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......
...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......
... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) [1]Low ......
... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) [1]Low ......
...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......
...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf = 0.3µs (Max) @Inductive Load [1]Low saturatio...
...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low ......
...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low ......
...TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input impedance z Includes a ...
...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low ......
...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low ......
...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low ......
...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low ......
...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low ......
...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low ......
...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low ......
...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low ......
... TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: The electrodes are isolated from case. z High input impedance z Includes a c...