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Product descripition: 1. IRFR2407TRPBF is a MOSFET power transistor with a low on-resistance of 24A. 2. It has a breakdown voltage of 500V and a drain-source voltage of 400V. 3. It is a surface-mount device wit...
Product Description: 1. Drain-Source Voltage: 600 V 2. Drain Current: 4.2 A 3. Gate-Source Voltage: 20 V 4. Peak Power Dissipation: 151 W 5. Channel Mode: N-Channel 6. Continuous Drain Current: 4.2 A 7. Operat...
Product Description: - High-performance N-Channel MOSFETs with low on-resistance - Low gate charge and fast switching speeds for improved efficiency and power density - High-voltage, high-current and low-Vce(sa...
Product Description: 1. N-channel MOSFET for high-power switching and linear operations 2. Maximum drain source voltage of 30V and a maximum current of 8A 3. Maximum Pulsed Drain Current of 30A 4. Low RDS(ON) o...
Features: - N-Channel Enhancement Mode - Low On-Resistance: 4.7 m (max) @ VGS = 10 V - Low Gate Charge: 17 nC (max) - Low Input/Output Capacitance: 5 pF (max) - 100% Rg Tested - RoHS Compliant Specifications: ...
Product Listing: IRF3205PBF MOSFET Parameters: Drain-Source Voltage: 55V Drain Current: 27A Continuous Drain Current: 27A Power Dissipation: 28W Gate-Source Voltage: 20V Operating Temperature: -55...
Product Description: N-Channel MOSFET Parameters: Drain to Source Voltage (Vdss): 100V Continuous Drain Current (Id): 33A On-State Resistance (Rds): 0.045 Ohm Gate to Source Voltage (Vgs): 20V Maximu...
Description: The IRFB3607PBF is a 100V N-Channel MOSFET with a maximum drain current of 75A and a maximum drain-source voltage of 100V. This MOSFET features a low gate threshold voltage, low on-resistance, and ...
IRFH7085TRPBF MOSFET Product Features: N-Channel 30V Drain-Source Voltage 10A Continuous Drain Current (Tc=25C) 175A Pulsed Drain Current Low On-Resistance Fast Switching High Temperature Operati...
Product: IRF2804PBF MOSFET Parameters: - Drain to Source Voltage (Vds): 500V - Drain Current (Id): 4.4A - Gate to Source Voltage (Vgs): +/- 20V - Drain to Gate Voltage (Vdg): 500V - Power Dissipation (Pd): 20W ...
Product Listing: IRF2807PBF N-Channel Power MOSFET Features: 100V drain-source voltage -55C to +150C operating temperature range 20A continuous drain current Fast switching speed Low gate charge L...
IRF7831TRPBF MOSFET Product Features: 100V maximum drain-source voltage 30V maximum gate-source voltage 0.4A continuous drain current 4.8A pulsed drain current -55C to +150C operating temperature ra...
IPD60R400CE - N-Channel Power MOSFET Features: Low On-Resistance RDS(on) Fast Switching Low Gate Charge Qg Low Input Capacitance Ciss Avalanche Rated Improved dv/dt Capability Specifications: Drai...
This IPD60R180P7SAUMA1 MOSFET Transistor from Infineon is a N-channel power MOSFET designed for use in high-efficiency synchronous rectification and high-voltage switching applications. This MOSFET has an RDS (...
Product Name: IRFS3206TRRPBF N-Channel MOSFET Package Type: TO-220AB Voltage - Drain Source Breakdown (Vds): 55V Voltage - Gate Threshold (Vgs): 10V Current - Continuous Drain (Id) @ 25C: 60A Rds On (Max) @ Id...
SI3443CDV-T1-GE3 MOSFET Features: - Low on-resistance - Low gate charge - Low input capacitance - High speed switching - RoHS Compliant Parameters: - Product Type: MOSFET - Configuration: Single - Drain-Source ...
Description: This BSC035N10NS5ATMA1 MOSFET is an N-Channel enhancement mode field-effect transistor with low on-resistance and low gate charge. It is designed for use in high-efficiency switching applications. ...
Product Listing: Product Name: BSC190N15NS3G N-Channel MOSFET Package Type: TO-220 Configuration: Single Voltage-Drain Source (Vdss): 150V Current-Continuous Drain (Id) @ 25C: 30A Rds On (Max) @ Id, Vgs: 4.2 O...
Product Listing: Product Name: IRFP4768PBF MOSFET Package: TO-247 Number of Channels: 3 Drain Source Voltage (Vds): 500V Continuous Drain Current (Id): 100A Power Dissipation (Pd): 600W RDS (on): 0.0042 Ohm Max...
Product Listing: IRF6775MTRPBF MOSFET Features & Benefits: Maximum Drain Source Voltage (Vdss): 60 V Rds On (Max) @ Id, Vgs: 0.039 Ohm @ 11A, 10V Gate Charge (Qg) @ Vgs: 11.9 nC @ 10V Transistor Polarit...