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Product Details Features 1. Built-in Schmidt trigger circuit 2. Low voltage operating type (VCC:2.3to 7.0V) 3. High sensitivity type (IS481 E VHL : TYP. 5.4 lx at Ta=25 C) (IS482 E VLH : TYP. 5.4 lx at Ta=25...
Product Details Functional Description [1] The CY7C199D is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Features Pin- and function-compatible with CY7C199C High speed tAA = 10 n...
Product Details Functional Description The CY7C10612DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features High speed tAA = 10 ns Low active power ICC = 175 mA at 1...
Product Details Features Organization: 1,048,576 words 4 bits High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time Low power consumpti...
Product Details Features Organization: 1,048,576 words 4 bits High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time Low power consumpti...
Product Details Features 4.5V5.5V operation CMOS for optimum speed/power Low active power 660 mW (max.) Low standby power (L version) 2.75 mW (max.) Automatic power-down when deselected TTL-com...
Product Details DESCRIPTION The ISSI IS62C256AL/IS65C256AL is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSI's high-performance, low power CMOS technology. FEATURES Access time...
Product Details Functional Description The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features High speed tAA = 15 ns Low active power 1210 mW (max.) Low CMOS...
Product Details Features Automatic power-down when deselected CMOS for optimum speed/power High speed 15 ns Low active power 660 mW (commercial) 688 mW (military20 ns) Low standby power 110 m...
Product Details Features 1. Built-in schmidt trigger circuit 2. High sensitivity(E V : MAX. 35rx at Ta= 25C) 3. A wide range of operating supply voltage (VCC: 4.5 to 17V) 4. LSTTL and TTL compatible output 5...
Product Details Features Organization: 1,048,576 words 4 bits High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time Low power consumpti...
Product Details DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode al...
Product Details Features Organization: 1,048,576 words 4 bits High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time Low power consumpti...
Product Highlights 32GB Data Storage Capacity 700x Speed Rating Read Speed: 105MB/s Write Speed: 67MB/s UDMA 6 Compliant Made in the U.S.A. Lifetime Warranty Card Type CompactFlash (CF) Capacity 32 GB Speed Rat...
... /N.W OPEN SIZE/CM PACKING/CM CARTON SIZE/CM PCS/CTN TTL/N.W TTL/G.W RE6412L 348 31 31.5*16*3.8 34.5 * 17.3 * 5 70 * 35.6 * 36.5 28 9.7 12.3 * LED lighting and flashing; * 100 dB siren function for warning i...
... /N.W OPEN SIZE/CM PACKING/CM CARTON SIZE/CM PCS/CTN TTL/N.W TTL/G.W RE6413 945 31 86*32*5 88.8 *33.2 * 6 91*34.7 *68.5cm 10 9.7 15.2 * LED lighting and flashing; * Hand-pressing power generation for huild-i...
5000K Solar Flashing Warning Lights 265V For Violation Capture 5000-6000K Solar Flashing Warning Lights Infrared Integrated Strobe Light Specification: Trigger mode: TTL level/switch quantity (Optional) Light ...
5000K Solar Flashing Warning Lights 265V For Violation Capture 5000-6000K Solar Flashing Warning Lights Infrared Integrated Strobe Light Specification: Trigger mode: TTL level/switch quantity (Optional) Light ...
... or Resistive touch panel * 300 nit Brightness * Onboard 200MHz MCU * 512 KB of SRAM * 128 MB of Flash memory * 1024 Byte EEPROM * XH2.54 4 Pins (+5V, TX, RX, GND) TTL serial interface * 1.25T-2-2A Audio por...