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... combined with low capacitances and very high switching operations. Specification Of SCT070H120G3AG Part Number: SCT070H120G3AG Drain-Source Voltage: 1200V Drain Current (Pulsed): 100A ......
...Circuit Chip SCT040H65G3AG SiC MOSFETs H²PAK-7 Wide Bandgap Transistors Product Description Of SCT040H65G3AG SCT040H65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK...
... features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system...
...Circuit Chip TO-247-3 Zero Recovery Product Description Of MSC050SDA170B MSC050SDA170B is Zero Recovery Silicon Carbide Schottky Diode, 1700V 136A Through Hole, Package is TO-247-3. Specification Of MSC050S...
...Integrated Circuit Chip Product Description Of IPP65R190CFD7A IPP65R190CFD7A is 650V CoolMOS CFD7A SJ Power Device, the package is TO-220-3, Through Hole. Specification Of IPP65R190CFD7A Part Number IPP65R1...
...): ±20V Gate Charge (Qg) (Max) @ Vgs: 87 NC @ 10 V Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 6110 PF @...
... Single FETs Transistors, 160 mohm, 1200V, M1, Package is TO-247-3L. Specification Of NTHL160N120SC1 Part Number NTHL160N120SC1 Input Capacitance (Ciss) (Max) @ Vds 665 pF @ 800 V Power Dissipation (Max) 119...
Integrated Circuit Chip NVH4L080N120SC1 1200V N-Channel MOSFETs Transistors TO-247-4 Product Description Of NVH4L080N120SC1 NVH4L080N120SC1 Low ON resistance and compact chip size ensure low capacitance and ga...
...low capacitance and gate charge. Specification Of NTBG060N090SC1 Part Number NTBG060N090SC1 Configuration: Single Fall Time: 11 ns Forward Transconductance - Min: ......
...: ±20V Source Current (Body Diode): 133A Forward Transconductance(VDS = 10 V, ID = 18 A) - Typ: 96S Input Capacitance (Ciss) (Max) @ Vds: 3592 PF @ 75 V...
...Circuit Chip N-Channel 700V Through Hole MSC090SMA070 Transistors Product Description Of MSC090SMA070 MSC090SMA070 is SiC MOSFETs provide high efficiency to enable a lighter, more compact system with improve...
.... Specification Of MSC020SDA120B Part Number MSC020SDA120B Reverse Recovery Time (trr) 0 ns Current - Reverse Leakage @ Vr 200 µA @ 1200 V Capacitance @ Vr, F 1130pF @ 1V, 1MHz Mounting Type Through Hole Pac...
..., and thermal capacitance ratings at low reverse current for lower switching loss. Specification Of MSC360SMA120 Part Number: MSC360SMA120 Gate Charge: 34 NC @ ......
Product Name: CY8CMBR3116-LQXIT Integrated Circuit IC Chip Product Features: - Low-Power, Capacitive Sensing Microcontroller - 96MHz ARM Cortex-M0+ Core - 16KB Flash Memory - 4KB SRAM - 4KB EEPROM - 256-Byte Ca...
...AM26LV32EIPWR is an integrated circuit (IC) chip designed for use in a variety of applications. It is a low-power, low-voltage octal bus transceiver that is ideal for applications that require high speed, lo...
...Circuit Chip IMW120R060M1H 1200V Discrete Semiconductor Transistors Product Description Of IMW120R060M1H IMW120R060M1H devices deliver extra safety margins for designs with increased bus voltage. Specificati...
... Circuit Chip TO-247-3 Product Description Of IMW120R350M1H IMW120R350M1H is 1200 V CoolSiC™ Trench Silicon Carbide MOSFETs in TO247-3 Package. Specification Of IMW120R350M1H Part Number IMW120R350M1H Vgs (...
... up to 4 times lower switching losses. Specification Of IMZA65R039M1H Part Number IMZA65R039M1H Input Capacitance (Ciss) (Max) @ Vds 1393 pF @ 400 V Technology SiCFET (Silicon Carbide) Vgs (Max) +20V, -2V Ga...
.... Specification Of IDK10G120C5XTMA1 Part Number: IDK10G120C5XTMA1 Speed: No Recovery Time > 500mA (Io) Current - Reverse Leakage @ Vr: 40 µA @ 1200 V Capacitance @ Vr, F: 365pF @ 1V, 1MHz Mounting Type:...
...-3, D²Pak (2 Leads + Tab), Surface Mount. Specification Of AIDK08S65C5ATMA1 Part Number AIDK08S65C5ATMA1 Current - Reverse Leakage @ Vr 50 µA @ 650 V Capacitance @ Vr, F 248pF @ 1V, 1MHz Mounting Type Surfac...