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... up to 4 times lower switching losses. Specification Of IMZA65R039M1H Part Number IMZA65R039M1H Input Capacitance (Ciss) (Max) @ Vds 1393 pF @ 400 V Technology SiCFET (Silicon Carbide) Vgs (Max) +20V, -2V Ga...
.... Specification Of IDK10G120C5XTMA1 Part Number: IDK10G120C5XTMA1 Speed: No Recovery Time > 500mA (Io) Current - Reverse Leakage @ Vr: 40 µA @ 1200 V Capacitance @ Vr, F: 365pF @ 1V, 1MHz Mounting Type:...
...-3, D²Pak (2 Leads + Tab), Surface Mount. Specification Of AIDK08S65C5ATMA1 Part Number AIDK08S65C5ATMA1 Current - Reverse Leakage @ Vr 50 µA @ 650 V Capacitance @ Vr, F 248pF @ 1V, 1MHz Mounting Type Surfac...
... configuration. Specification Of MAX14935EAWE+ Part Number: MAX14935EAWE+ Data Rate: 25 Mb/s Isolation Voltage: 5000 Vrms Isolation Type: Capacitive Coupling Supply Voltage -...
... such as industrial IoT, industrial networking systems, and building automation. Specification Of MAX22517AWA+ Part Number MAX22517AWA+ Technology Capacitive Coupling Type General Purpose Isolated Power No N...
...268-3 Integrated Circuit Chip Product Description Of MSC180SMA120S MSC180SMA120S is a 1200 V, 180 mΩ Silicon Carbide N-Channel Power MOSFET in a TO-268 (D3PAK) package. Specification Of MSC180SMA120S Part N...
... gate resistance. Specification Of MSC040SMA120B Part Number MSC040SMA120B Gate Charge (Qg) (Max) @ Vgs 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 1000 V Power Dissipation (Max) 323W (Tc) B...
...Circuit Chip MSC080SMA120B Transistors TO-247-3 Through Hole Product Description Of MSC080SMA120B MSC080SMA120B SiC MOSFETs provide high efficiency to enable a lighter, more compact system with improved ther...
... molded package. Specification Of QH8MA4TCR Part Number QH8MA4TCR Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 15V Power - Max 1.5W Operating Temperature 150°C (TJ) ...
...Circuit Chip 16SVPG270M Aluminum Polymer Capacitors 270µF Radial , SMD Product Description Of 16SVPG270M 16SVPG270M is 270µF 16V Conductive Polymer Aluminum Solid Capacitors, 8mOhm 5000 Hrs @ 105°C, Surfac...
...Integrated Circuit Chip Product Description Of EEEHC1C101XP EEEHC1C101XP is 100µF 16V Aluminum Electrolytic Capacitors, Radial, Can - SMD 3000 Hrs @ 105°C, Surface Mount Type. Specification Of EEEHC1C101XP ...
...Circuit Chip APXF2R5ARA331MF45G 330µF Aluminum Polymer Capacitors 12mOhm Product Description Of APXF2R5ARA331MF45G APXF2R5ARA331MF45G is 2.5V 330uF 20% Tol Aluminum Organic Polymer Capacitors, Radial, Can ...
...Circuit Chip IMBG65R107M1HXTMA1 N-Channel 650V MOSFETs Transistors Product Description Of IMBG65R107M1HXTMA1 IMBG65R107M1HXTMA1 is 650V CoolSiC M1 SiC Trench Power Device, SMD Compact Package SiC MOSFETs. S...
...Circuit Chip BSZ100N06LS3GATMA1 8-PowerVDFN 60V N-Channel Transistors Product Description Of BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 The OptiMOS ™ 60V is ideal for synchronous rectification in switched mode po...
... Mount. Specification Of IPT015N10N5 Part Number IPT015N10N5 Input Capacitance (Ciss) (Max) @ Vds 16000 pF @ 50 V Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (......
...Circuit Chip NVH4L060N090SC1 Silicon Carbide MOSFETs Transistors TO-247-4 Product Description Of NVH4L060N090SC1 NVH4L060N090SC1 is 60mohm, 900V Silicon Carbide (SiC) N-Channel MOSFET Transistors, package i...
... 4.3V @ 20mA Gate Charge (Qg) (Max) @ Vgs 196 nC @ 15 V Vgs (Max) +19V, -10V Input Capacitance (Ciss)...
...) @ Id 4.5V @ 1.89mA Gate Charge (Qg) (Max) @ Vgs 196 nC @ 12 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7370 pF @ 300 V...
...Circuits IPP60R065S7XKSA1 N-Channel 8A MOSFETs Transistors Product Description Of IPP60R065S7XKSA1 IPP60R065S7XKSA1 offers a cost-optimized, 10mΩ low on-resistance RDS(on), enabling increased power density a...
...Circuit Chip NTHL080N120SC1A N-Channel 1200V 31A Transistors Product Description Of NTHL080N120SC1A NTHL080N120SC1A features planar technology that works reliably with negative gate voltage drives and turns ...