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...2SA1869 is a Silicon PNP Power Transistor from ISC, designed for power amplifier applications. It features a collector-emitter breakdown voltage of -50V, good linearity of hFE, and is a complement to type 2S...
Product Overview The BFP193 is a low-noise silicon bipolar RF transistor designed for high-gain and linear broadband amplifiers up to 2 GHz. It offers excellent performance with a transition frequency (fT) of 8...
...emitter breakdown voltage of 140V, good linearity of hFE, and a wide area of safe operation. This transistor is recommended for 60W audio frequency amplifier output stages and is the complement to the 2SB817...
Product Overview The S8050-LQ THRU S8050-HQ series are NPN general purpose amplifiers designed for linear amplification. These devices feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free,...
Product Overview The S8550-LQ/HQ is a general-purpose PNP amplifier designed for linear amplification applications. It features epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture ...
Product Overview The SS8550-LQ and SS8550-HQ are PNP general-purpose amplifiers designed for linear amplification. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture ...
Product Overview The MMST4403Q is a PNP general-purpose amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It is designed for switching and linear amplification applications, offering high conducta...
...2SC1815. It offers excellent HFE linearity, high voltage and current capabilities, and low noise performance. With a Collector-Emitter voltage (BVCEO) of -50V, it is suitable for low frequency, low noise amp...
...Transistor designed for high voltage and high current applications. It features excellent hFE linearity and low noise, making it suitable for audio frequency amplifier circuits. Available in a SOT-23 package...
Product Overview The S9014 is a Silicon Epitaxial Planar Transistor designed for per-amplifier low level and low noise applications. It offers excellent hFE linearity and a power dissipation of 0.2W. This trans...
...Overview The S9015 is a PNP transistor designed for low-level, low-noise pre-amplifiers. It is complementary to the S9014 transistor and offers good linearity characteristics. The marking for this transistor...
... is a silicon epitaxial planar transistor designed for general-purpose amplifier applications. It offers high voltage and high current capabilities with excellent hFE linearity and low noise. This complement...
..., along with small junction capacitance and a large dynamic range for excellent current linearity. This transistor is ideal for use in ultra-high frequency microwave, VHF, UHF, and CATV high-frequency broadb...
... Planar Transistor designed as a complementary component to the S9015. It offers excellent HFE linearity and is suitable for low-level, low-noise pre-amplifier applications. The transistor has a power dissip...
...amplifiers operating at low currents. It is suitable for DC power supply voltages between 3.3V and 5V and can be used in oscillator circuits up to 4.0 GHz. This transistor offers approximately 1.0 dB noise f...
...2SC6026MFV is a silicon NPN epitaxial planar transistor designed for general-purpose amplifier applications. It offers high voltage and current capabilities, excellent hFE linearity, and high DC current gain...
..., small junction capacitance, and a large dynamic range with good current linearity. This transistor is ideal for applications in ultra-high frequency microwave, VHF, UHF, and CATV high-frequency wideband lo...
... include high voltage capability (VCEO = -120 V), excellent hFE linearity, high hFE, low noise, and a small package. It is complementary to the 2SC4117.Product Attributes Brand: TOSHIBA Type: Silicon PNP ......
... voltage and current capabilities (VCEO = 50 V, IC = 150 mA max), high hFE (120 to 700), and excellent hFE linearity. It is complementary to the 2SA1618.Product Attributes Brand: TOSHIBA Origin: Japan (impli...
... general-purpose amplifier applications. Key features include a small package (dual type), high voltage and current capabilities (VCEO = 50 V, IC = 150 mA max), high hFE (120 to 400), and excellent hFE linea...