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Total 6100 products for channel drain system Manufacture & Suppliers

NTR4503NT1G MOSFET Power Electronics Single N-Channel Low Gate Charge SOT-23 30 V 2.5 A

...Channel (–1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFETNTR4503NT1G MOSFET Power Electronics Single N-Channel Low Gate Charge SOT-23 30 V 2.5 A –20 V, –0.83 A, 0....

Shenzhen Sai Collie Technology Co., Ltd.
China

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FDC610PZ MOSFET Power Electronics P-Channel PowerTrench –30V –4.9A 42mΩ

... MOSFET–20 V, –0.83 A, 0.5 Ω –20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET–20 V, –0.83 A, 0.5 Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Cont...

Shenzhen Sai Collie Technology Co., Ltd.
China

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NTS4409NT1G MOSFET Power Electronics Single N-Channel Small ESD Protection SC-70 SOT-323 25 V 0.75 A

...��20 V, –0.83 A, 0.5 Ω –20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET –20 V, –0.83 A, 0.5 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25 V ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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Integrated Circuit Chip IMW120R014M1H N-Channel Silicon Carbide Transistors TO-247-3

.... Specification Of IMW120R014M1H Part Number: IMW120R014M1H Technology: SiC Mounting Style: Through Hole Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 1.2...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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N-Channel IMBG65R260M1H Silicon Carbide Single FETs MOSFETs Transistors TO-263-8

...Channel IMBG65R260M1H Silicon Carbide Single FETs MOSFETs Transistors TO-263-8 Product Description Of IMBG65R260M1H IMBG65R260M1H is 650V N-Channel MOSFETs Transistors, enables the simplified and cost effec...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip IPB180P04P403ATMA2 P-Channel 40V 180A Transistors

...Channel 40V 180A Transistors Product Description Of IPB180P04P403ATMA2 IPB180P04P403ATMA2 is a P-Channel 40 V 180A (Tc) 150W (Tc) Transistors Surface Mount PG-TO263-7-3. Specification Of IPB180P04P403ATMA2 P...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

...Channel Enhancement Mode BSP315 SIPMOS • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) Transient thermal impedance Zth JA = ƒ(tp) param...

Anterwell Technology Ltd.
Guangdong,China

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BUK7Y3R5-40HX , NXP , 40 V , 120A , Rds On - Drain-Source Resistance , 934660066115

... Voltage: 40 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 3.5 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2.4 V ......

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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BUK7Y3R5-40HX , , 40 V , 120A , Rds On - Drain-Source Resistance , 934660066115

... Voltage: 40 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 3.5 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2.4 V ......

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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SIHW30N60E-GE3 High Performance 30A 600V N Channel MOSFET for Power Electronics

...Channel MOSFET for Power Electronics Product Features: -High Speed Switching -Low Gate Charge -Low On-Resistance -TrenchFET Power MOSFET -Excellent Gate Charge x RDS(on) Product Technical Specifications: -Dr...

Shenzhen Sai Collie Technology Co., Ltd.
China

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Stainless Galvanized Steel Grating Channels With Siphon Floor Drain / Plate Cover

... they can all work certain scenarios, it is important to choose something that is strong, durable, and long-lasting. Stainless steel trench drain grates are an excellent option that will work for any facilit...

Hebei Qijie Wire Mesh MFG Co., Ltd
Hebei,China

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FCB36N60NTM SMD SMT MOSFET Transistor IC Chip N Channel 600V

... Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 36 A Rds On - Drain-Source Resistance: 90 mOhms Vgs - Gate-Source Voltage: - 30 V...

Walton Electronics Co., Ltd.
China

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FDMA3023PZ MOSFET Transistor IC Chip MicroFET-6 Package 2P Channel

...MicroFET-6 Transistor Polarity: P-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 2.9 A Rds On - Drain-Source Resistance: 90 mOhms Vgs - Gate-S...

Walton Electronics Co., Ltd.
China

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1 Channel Diode MOSFET Chips IRLML6244TRPBF Transistor 1.3W

...: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 6.3 A Rds On - Dra...

Hong Kong Jia Li Xin Technology Limited
China

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Single Configuration N Channel MOSFET 60V 11A 37A

...-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 37 A Rds On - Drain-Source Resistance: 11.5 mOhms Vgs - Gate-Source V...

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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STL24N60DM2 MOSFET N-channel 600 V, 0.195 Ohm typ 15 A MDmesh DM2 Power MOSFET

...: PowerFLAT-8x8-5 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 15 A Rds On - Drain-Source Resistance: 195 mOhms Vgs ...

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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FCB36N60NTM SMD SMT MOSFET Transistor IC Chip N Channel 600V

... Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 36 A Rds On - Drain-Source Resistance: 90 mOhms Vgs - Gate-Source Voltage: - 30 V...

Walton Electronics Co., Ltd.
China

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FDMA3023PZ MOSFET Transistor IC Chip MicroFET-6 Package 2P Channel

...MicroFET-6 Transistor Polarity: P-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 2.9 A Rds On - Drain-Source Resistance: 90 mOhms Vgs - Gate-S...

Walton Electronics Co., Ltd.
China

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Single Configuration N Channel MOSFET 60V 11A 37A

...-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 37 A Rds On - Drain-Source Resistance: 11.5 mOhms Vgs - Gate-Source V...

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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STL24N60DM2 MOSFET N-channel 600 V, 0.195 Ohm typ 15 A MDmesh DM2 Power MOSFET

...: PowerFLAT-8x8-5 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 15 A Rds On - Drain-Source Resistance: 195 mOhms Vgs ...

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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