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IRLML6244TRPBF MOSFET Power Electronics High Performance Low On-Resistance Low Gate Charge Parameters: • Logic Level Gate Drive • Maximum Drain Source Voltage: 60V • Maximum Gate Source Voltage: ±20V • ......
...Electronics High Performance Low On-Resistance Enhanced Power Handling Product Overview: The IRLML2803TRPBF is a high-speed, logic level, N-channel MOSFET with a low RDS(on). This device is suitable for a wi...
... for Power Electronics Applications Product Features: -60V Drain-Source Breakdown Voltage -Typical Output Capacitance: 790pF -Typical Gate Charge: 34nC -RDS(on) = 0.19 Ohm -Maximum Continuous Drain Current: ...
...Electronics for Enhanced Efficiency and Reliability IRFS7734TRLPBF MOSFET Transistor Product Description: The IRFS7734TRLPBF is a P-channel enhancement mode power MOSFET with a low on-resistance and low gate...
... - Gate-Source Voltage: ±20V - Continuous Drain Current: 15A - Drain-Source On-State Resistance: 0.06 Ohm - Gate Charge: 47nC - Power Dissipation:...
... load switch. It features low gate charge, low on-resistance, and fast switching speed. The MOSFET is also RoHS compliant and halogen free. Features • Low gate charge • Low on resistance • Fast switching spe...
... gate charge, making it ideal for power switch applications. The product also has a low input capacitance and fast switching speeds. Specifications: • N-Channel MOSFET • Integrated Schottky Diode • Ultra-Low...
... of 1.2 mΩ. Its low gate charge and fast switching speed make it ideal for high-current and high-frequency applications. Features: • Low RDS(on): 1.2 mΩ • Low gate charge • High-frequency switching • Maximum...
...Electronics Product Description: The AO4406A are N-Channel enhancement mode MOSFETs designed for various switching applications in the automotive and industrial sectors. This device features low on-state res...
...electronics applications. It features a wide range of features such as low on-resistance, high efficiency, and low gate charge for maximum performance. The device is available in both TO-220 and D2PAK packag...
NTA4001NT1G MOSFET Power Electronics SC-75 SMD High Performance Voltage Gate Charge RDS Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - ......
Single P-Channel (1.5 V) Specified PowerTrench MOSFETSingle P-Channel (1.5 V) Specified PowerTrench MOSFETFDN5630 MOSFET Power Electronics N-Channel POWERTRENCH 60 V Low Gate Charge 20 V, 0.83 A, 0.5 2...
Single P-Channel (1.5 V) Specified PowerTrench MOSFETSingle P-Channel (1.5 V) Specified PowerTrench FDC3612 MOSFET Power Electronics High Performance Trench Technology for Extremely Low Gate Charge P-Channe...
IRFU220NPBF MOSFET Power Electronics High Performance Low On-Resistance Low Gate Charge Features: • N-Channel • Logic Level Gate • Low On-Resistance • Fast Switching Capability • Low Gate Threshold Voltage • Hi...
.... It is designed to provide low on-resistance, low gate charge, and fast switching speeds. Features: -N-Channel -Low On-Resistance (Rdson) -Low Gate Charge -Fast Switching Speeds -High Current Rating (2.2A) ...
...Channel (–1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFETNTR4503NT1G MOSFET Power Electronics Single N-Channel Low Gate Charge SOT-23 30 V 2.5 A –20 V, –0.83 A, 0....
...Electronics High Performance Low Cost Switching Solution Description: The IRFU210PBF is a high-performance N-Channel MOSFET designed for use in power applications. It features a low gate charge, low on-state...
...Electronics Product Features: • N-Channel Enhancement Mode • Avalanche-Rated • Logic Level Gate Drive • Low Gate Charge • Low On-Resistance • Low Input Capacitance • Low Profile Package • ESD Protection Prod...
...Electronics The IRFS7730TRL7PP is a high-performance power MOSFET from International Rectifier. Featuring an advanced high cell density process, this device delivers low on-resistance with fast switching spe...
.... It has a maximum current rating of 850A and an RDS(on) of 4mΩ at 25°C and 3.2mΩ at 175°C. It is designed with a low gate charge of 40nC and a fast switching speed. It is capable of operating at temperature...