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Integrated Circuit Chip IAUS300N08S5N014 Single FETs Transistors 16PowerSOP Module Product Description Of IAUS300N08S5N014 IAUS300N08S5N014 is OptiMOS™-5 Power-Transistor, N-Channel Transistor, Surface Mount. ...
... (Metal Oxide) Power Dissipation (Max): 300W (Tc) Package / Case: 8-PowerSFN Drain To Source Voltage: 100 V Current - Continuous Drain (Id) @ 25°C: 260A (Tc)...
... Part Number IPP65R050CFD7A FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 45A (Tc) Drive Voltage (Max Rds On, Min Rds On)...
... contains two N-channel MOSFETs that can operate over an input voltage range of 0.6 V to 5.7 V, and can support a maximum continuous current of 6 A per channel. Specification Of TPS22976DPUR Part Number TPS2...
... Status Obsolete FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75 V Current - Continuous Drain (Id)...
...Integrated Circuit Chip 8WDFN N-Channel Product Description Of NVTFS016N06CTAG NVTFS016N06CTAG is N-Channel Single FETs MOSFETs Transistors, 60V 8A (Ta), 32A (Tc) 2.5W (Ta), 36W (Tc), Surface Mount, package...
Integrated Circuit Chip NVBG060N090SC1 D2PAK-7 Surface Mount Transistors Product Description Of NVBG060N090SC1 NVBG060N090SC1 provides reliable, high-efficiency performance for energy infrastructure and industr...
... Dissipation (Max): 3.9W (Ta), 113W (Tc) Pulsed Drain Current(TA = 25°C, Tp = 10us): 900A Current - Continuous Drain (Id) @ 25°C:...
Integrated Circuit Chip NVH4L020N120SC1 N-Channel Transistors TO-247-4L Product Description Of NVH4L020N120SC1 NVH4L020N120SC1 device has optimum performance when driven with a 20V gate drive but also works wel...
... Part Number: MSC035SMA070 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain To Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds O...
...Integrated Circuit Chip Product Description Of MSC035SMA170B4 MSC035SMA170B4 devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Sili...
... Style: Through Hole Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 1.2 kV Id - Continuous Drain Current: 127 A Rds On...
...Integrated Circuit Chip TO-247-4 Silicon Carbide Junction Transistor Product Description Of IMYH200R075M1H IMYH200R075M1H is CoolSiC™ 2000 V SiC Trench MOSFET, Silicon Carbide Junction Transistor. Specifica...
... best-in-class performance with state-of-the-art ease of use. Specification Of IMBG65R030M1H Part Number: IMBG65R030M1H Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, ...
Integrated Circuit Chip IMBG120R060M1H TO-263-8 1200V SiC Trench MOSFET Transistors Product Description Of IMBG120R060M1H IMBG120R060M1H is CoolSiC™ 1200V SiC Trench MOSFET N-Channel Transistors with .XT inter...
... Part Number IMZ120R140M1H FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On...
... applications. Specification Of IMBG65R022M1H Part Number: IMBG65R022M1H Vds - Drain-Source Breakdown Voltage: 650 V Transistor Polarity: N-Channel Id - Continuous Drain Current: 33 A...
Integrated Circuit Chip IMW65R083M1H SiC MOSFET N-Channel 650V Transistors Product Description Of IMW65R083M1H IMW65R083M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to...
... at a fixed frequency (typically 48 kHz) to which all A2B nodes synchronize. Specification Of AD2428KCPZ Part Number: AD2428KCPZ I/O: 1.8 V T Frequency Continuous Clock: 48.5 KHz SYNC Pin Input Jitter RMS TI...
... Of MSC025SMA120B Part Number MSC025SMA120B Current - Continuous Drain (Id) @ 25°C 103A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, ......