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...PNP Silicon general-purpose transistor designed for switching and amplification applications. It offers a collector current capability of -500 mA and a collector-emitter voltage of -45 V. This device is the ...
...collector current capability. It is suitable for various electronic circuits requiring robust performance and reliability. Product Attributes Marking: 1013 Package: SOT-89 Classification of hFE: R, O, Y Tech...
... (fT) of 80 MHz. Key electrical characteristics include a collector-base breakdown voltage of 60V and a collector-emitter breakdown voltage of 50V. This transistor is suitable for various electronic circuits...
... is a bipolar transistor designed for power switching applications. It offers a high collector-emitter breakdown voltage of 400V and a continuous collector current of 1A, with a power dissipation of 1.25W. T...
...an NPN transistor designed for surface mounting in a SOT-23 package. It offers a continuous collector current of up to 1.8A and a collector-emitter voltage of 25V. This transistor is suitable for various ele...
...S8050W is an NPN transistor designed as a complementary component to the S8550. It offers a continuous collector current of 0.5A and a collector dissipation of 0.3W. This transistor is suitable for various e...
... capabilities. This transistor is complementary to the 2SA1201. Key electrical characteristics include a collector-base breakdown voltage of 120V and a collector-emitter breakdown voltage of 120V. With a typ...
...AF transistors designed for AF driver and output stages. These transistors offer high collector current, low collector-emitter saturation voltage, and are available in complementary PNP types (BCX51BCX53). T...
Product Overview The NPN Darlington Transistor is designed for high current gain applications. It offers robust performance with a maximum collector current of 500 mA and a collector power dissipation of 200 mW...
...(V): mV~400Vac/Vdc Current(A): 200A Speed(rpm): 50RPM Protection: IP66 JARCH has strong technical research and development strength and experienced engineers. This product model BC070-4P200 has successfully ...
... Joint slip rings Custom Service. For more information on high current slip rings, please click :Contact Us,thanks. ----------------------Ms. Kris Yao Product Description Slip rings can be used in any electr...
1. About Slip ring JARCH Slip Rings are electromechanical devices for transmitting electrical power, control signals, and/or data from a stationary to a rotating structure (or vice versa). We offer a complete r...
...current Darlington transistor array integrated circuit. It consists of seven pairs of NPN Darlington tubes. Its high voltage output characteristics and cathode clamp diodes can convert inductive loads. The c...
... loads. Each pair offers a 500mA collector current rating, with the option to parallel pairs for increased current capability. Integrated 2.7k series base resistors allow direct operation with TTL or 5V CMOS...
...transistor in a SOT23 package. It offers a high continuous collector current of 1A and a peak pulse current of 2A, with a power dissipation of 500mW. This device is suitable for high current gain hold-up app...
... medium power transistor in a SOT23 package. It offers a continuous collector current of 1A, a peak pulse current of 2A, and a power dissipation of 500mW. This device is characterized for high current gain h...
... The FZT651 is a 60V NPN medium power transistor designed for high continuous current applications. It offers a high continuous collector current of 3A and a peak pulse current of 6A, with a low saturation v...
...is complementary to the SS8550 transistor. This device is suitable for various electronic circuits requiring robust current handling capabilities.Product Attributes Brand: JSMICRO Semiconductor Model: SS8050...
... transistor from LESHAN RADIO COMPANY, LTD., designed for high current capacity in a compact SOT-23 package. It features an epitaxial planar type construction and offers a high collector current capability o...
... Optocouplers P/C LTV-357T BIN C (2.0) STD. TYPE FEATURES Current transfer ratio( CTR : MIN. 50% at IF = 5mA, VCE = 5V ) High input-output isolation voltage( Viso = 3,750Vrms ) High collector-emitter voltage...