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1. OUTLINE This 104PW201 inverter is for LCD module. Adaptable LCD modules are as follows. Adaptable LCD modules NL6448BC33-63C NL6448BC33-63D NL6448BC33-64 NL6448BC33-64C NL8048BC24-01 NL8060BC26-28 2. ABSOLUT...
MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE Low Leakage High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 unless othe...
Glazing Steatite Ceramic Insulator Rod / Insulating Steatite Ceramic Insulator Rod Product Description Item Test Condition Unit&Symbol Steatite Ceramic / C221 The main chemical ingredient Steatite Bulk Density ...
MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE Low Leakage High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 unless othe...
MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE Low Leakage High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 unless othe...
MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE Low Leakage High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 unless othe...
Product Overview The 1N5819W-L is a Schottky Barrier Diode designed for various electronic applications. It offers efficient rectification with low forward voltage drop and fast switching characteristics.Produc...
Product Overview The HR13003 is a TO-126 plastic-encapsulated NPN transistor from SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD. It features high total power dissipation, making it suitable for various electr...
Product Overview The INCHANGE Semiconductor 2SA1494 is a silicon PNP power transistor designed for audio and general-purpose applications. It features a high Collector-Emitter Breakdown Voltage of -200V(Min) an...
SS8050 TRANSISTOR (NPN) The SS8050 is an NPN transistor, complementary to the SS8550. It is designed for general-purpose applications. Product Attributes Marking: Y1 Package: SOT-23 Manufacturer: SHENZHEN JTD E...
Product Overview The MMBTA42 is a PNP transistor designed for high voltage applications. It offers high stability and reliability, with a maximum power dissipation of 350mW. It is complementary to the MMBTA92.P...
Product Overview The S9014 is an NPN bipolar junction transistor (BJT) encapsulated in a SOT-23 plastic package. It is designed for general-purpose applications and is complementary to the S9015 transistor.Prod...
Product Overview The MMBTA42 is a PNP transistor designed for high voltage applications. It offers high stability and reliability, making it suitable for various electronic circuits. This transistor is compleme...
Product Overview The MJE3055T is a transistor designed for audio power amplification. It is manufactured by Shenzhen Minos. Product Attributes Brand: MNS Model: MJE3055T Package Type: TO-220 Technical Specifica...
Product Overview The 2SB1197 is a PNP General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features epoxy that meets UL-94 V-0 flammability rating and is halogen-free available upo...
Product Overview The MG150HF12MRC2 S-M242 is a high-performance IGBT module designed for industrial applications. It features short circuit rating, low stray inductance, low saturation voltage, and ultra-low lo...
Product Overview The INCHANGE Semiconductor BTA08-600C is a Triac designed for general-purpose applications requiring high gate sensitivity. It is suitable for phase control and static switching in 4-quadrant a...
Product Overview The MMBT3904M is an NPN transistor featuring a complementary counterpart in the MMBT3906M. Its small SOT-723 package makes it suitable for space-constrained applications. This transistor is des...
MMBT4401 NPN TRANSISTOR The MMBT4401 is an NPN transistor designed for switching applications. It offers reliable performance with key electrical characteristics suitable for various electronic circuits.Product...
MMBTA42 NPN Transistor The MMBTA42 is an NPN transistor designed for high breakdown voltage and low collector-emitter saturation voltage. It serves as a complementary part to the MMBTA92. This transistor is sui...