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Total 5672 products for cut silicon wafer Manufacture & Suppliers

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm Product introduction The 4H n-type Silicon Carbide (SiC) single crystal substrate is a critical semiconductor material widely utilized in power...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized

SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, ......

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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6Inch 4H-N Silicon Carbide SiC Substrate Dia 150mm Thickness 350um 500um N Type Prime Grade Dummy Grade

SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, ......

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime Grade Dummy Grade

3C SiC wafer, 3C Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, Prime Grade, Dummy Grade, 4inch 3C N-type SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 3C-N 4H-N, 4H-SEMI, 6H-N, HPSI 4H-P ...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

Product Description: Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350��m For High-power Devices 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal conductivity and...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade

Product Description: 2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-tem...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade

Product Description: 4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Sic Silicon Carbide Wafer 5*5mm/10*10mm 4H-P Type Production Grade For Power Electronics

Product Description: Sic Silicon Carbide Wafer 5*5mm/10*10mm 4H-P Type Production Grade For Power Electronics 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature,...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide Wafer 6Inch Sic Single Crystal 150mm Diameter 3C-N Type Suit for Communication Radar Systems

Product Description: Silicon Carbide Wafer 6Inch Sic Single Crystal 150mm Diameter 3C-N Type Suit for Communication Radar Systems 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with goo...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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5*5mm/10*10mm Silicon Carbide Wafer Thickness 350μm Sic 3C-N Type High Mechanical Strength Production Grade

Product Description: 5*5mm/10*10mm Silicon Carbide Wafer Thickness 350��m Sic 3C-N Type High Mechanical Strength Production Grade 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with good...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices

Product Description: Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices 4H-P type silicon carbide substrate is a semiconductor material with a hexagonal lattice structure, and ...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide Wafer Sic Substrate 4H-P Type Off Axis 4.0°toward Zero Grade For Temperature Sensor

Product Description: Silicon Carbide Wafer Sic Substrate 4H-P Type Off axis: 4.0°toward Zero Grade For temperature sensor 4H-P silicon carbide (SiC) substrate is a high performance semiconductor material with a...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade

...Silicon carbide wafer Sic 6H-P type Off axis: 2.0° toward Production Grade Research Grade Type 6H-P Sic is made of advanced semiconductor material preparation process with specific crystal structure and dopi...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates

...high-purity single-crystal wafers manufactured using the Physical Vapor Transport (PVT) method. These substrates exhibit outstanding electrical and thermal properties, including wide ......

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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4'' Double Side Polished Wafer Single Crystal Quartz AT-Cut For Resonators

4'' double side polish Single Crystal Quartz Wafer AT-Cut for Resonators, Oscillators and Filters Quartz Crystals are formed thanks to hydrothermal synthesis. Production takes place in a thick pressure vessel i...

Hangzhou Freqcontrol Electronic Technology Ltd.
Shanghai,China

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Various Cut Angle Lithium Niobate Wafers For SAW Devices And Optical Waveguides

Various Cut Angle ithium Niobate wafers for SAW Devices and Optical Waveguides Lithium Niobate (LiNbO3, LN) crystal is a kind of artificial crystal material with excellent electro-......

Hangzhou Freqcontrol Electronic Technology Ltd.
Shanghai,China

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4 Inch Double Side Polish Lithium Niobate Wafer 128Y Cut For SAW Filters transducers

4 Inch Double Side Polish LiNbO3 Wafer 128Y Cut For SAW Filters Transducers Lithium Niobate is a ferroelectric material suitable for a variety of applications. Its excellent electro-optic, nonlinear optical and...

Hangzhou Freqcontrol Electronic Technology Ltd.
Shanghai,China

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Dia 6'' 8'' LiNbO3 Wafer 128 Degrees Y Z-Cut For Surface Acoustic Wave Devices

Large Dia 6'' 8'' LiNbO3 wafers 128��Y Z-cut For Surface Acoustic Wave Devices Lithium niobate (LiNbO3) single crystal is a ferroelectric crystal with high electromechanical coupling coefficient and low propagat...

Hangzhou Freqcontrol Electronic Technology Ltd.
Shanghai,China

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Black Pyroelectric Free LiNbO3 Wafer 8 Inch 128Y-cut SAW IDT Application

Black Pyroelectric Free LiNbO3 Wafer 8 Inch 128Y-cut SAW IDT Application Lithium Niobate (LiNbO3) is a ferroelectric material suitable for a variety of applications. Its versatility is made possible by the exce...

Hangzhou Freqcontrol Electronic Technology Ltd.
Shanghai,China

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Cut Silicon Wafer

Total 5672 products for cut silicon wafer Manufacture & Suppliers

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm

4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized

6Inch 4H-N Silicon Carbide SiC Substrate Dia 150mm Thickness 350um 500um N Type Prime Grade Dummy Grade

4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime Grade Dummy Grade

Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade

4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade

Sic Silicon Carbide Wafer 55mm/1010mm 4H-P Type Production Grade For Power Electronics

Silicon Carbide Wafer 6Inch Sic Single Crystal 150mm Diameter 3C-N Type Suit for Communication Radar Systems

55mm/1010mm Silicon Carbide Wafer Thickness 350μm Sic 3C-N Type High Mechanical Strength Production Grade

Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices

Silicon Carbide Wafer Sic Substrate 4H-P Type Off Axis 4.0°toward Zero Grade For Temperature Sensor

Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade

4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates

4'' Double Side Polished Wafer Single Crystal Quartz AT-Cut For Resonators

Various Cut Angle Lithium Niobate Wafers For SAW Devices And Optical Waveguides

4 Inch Double Side Polish Lithium Niobate Wafer 128Y Cut For SAW Filters transducers

Dia 6'' 8'' LiNbO3 Wafer 128 Degrees Y Z-Cut For Surface Acoustic Wave Devices

Black Pyroelectric Free LiNbO3 Wafer 8 Inch 128Y-cut SAW IDT Application