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Product Overview The PBC817-16-AU, BC817-25-AU, and BC817-40-AU are silicon NPN epitaxial general purpose transistors designed for amplifier applications. They offer excellent DC current gain characteristics an...
Product Overview The MJD122 M is a TO-252 Plastic-Encapsulate Transistor featuring high DC current gain and a built-in damper diode at the E-C junction. It is electrically similar to the popular TIP122 and comp...
... The 2SA1037-R is a PNP Silicon Epitaxial Planar Transistor. It is subdivided into three groups (Q, R, and S) based on its DC current gain. This transistor can be manufactured in different pin configurations...
... for high voltage and general purpose applications. It features a Collector-Emitter Sustaining Voltage of 300V (Min), a DC Current Gain of 100 (Min) @ IC=50mA, and a low Collector Saturation Voltage of 1.0V ...
...a complementary pair with the 2SB647/A. It offers robust performance with high breakdown voltages and reliable DC current gain characteristics.Product Attributes Brand: JSMICRO Semiconductor Product Type: Tr...
...general-purpose amplifier and low-speed switching applications. They feature a TO-220C package, high DC current gain, and low collector saturation voltage. These transistors are complementary to the TIP120/1...
Product Overview The MJ15023-MJ15025 series are PNP power transistors featuring high DC current gain (hFE = 15 Min @ IC = 8A) and an excellent safe operating area. Designed for high power audio, disk ......
...PNP Darlington Power Transistor designed for general-purpose amplifier and low-speed switching applications. It offers a high DC Current Gain (hFE) of 750 minimum at IC=-1.5 A and a Collector-Emitter Breakdo...
... designed for low-frequency applications, offering low VCE(sat) of -0.35V (Typ.) and excellent DC current gain characteristics. They serve as complements to the 2SD2098 / 2SD2118 / 2SD2097 series.Product Att...
... of 500mA / 50mA. This transistor complements the 2SB1197 and is suitable for use in common emitter configurations. Key features include a high DC current gain (hFE) and a transition frequency (fT) of 150 MH...
Product Overview The 2SD2098 is an NPN transistor designed for general-purpose applications. It features low VCE(sat) and excellent DC current gain characteristics. This transistor complements the 2SB1386 and i...
.... Key advantages include high DC current gain (hFE = 100 to 320), low saturation voltage (VCE (sat) = -0.4 V max), and suitability as a driver stage for small motors. It is ......
.... Key electrical characteristics include a collector-base breakdown voltage of 120V and a collector-emitter breakdown voltage of 120V. With a typical DC current gain (hFE) ranging from 80 to...
... voltage with a VCE(SAT) of -0.35V (MAX) at IC / IB = -1A / -50mA and excellent DC current gain characteristics.Product Attributes Brand: UNISONIC TECHNOLOGIES CO., LTD Material: Silicon Certifications: Lead...
...silicon PNP epitaxial bipolar transistor designed for power amplifier and power switching applications. It features high DC current gain, low collector-emitter saturation voltage, and high-speed switching ca...
.... Monolithic structure for high reliability. Excellent solderability and high heat resistance Low DC resistance. No cross coupling due to magnetic shield Applications: Test Instruments DC-DC converter circui...
.... Monolithic structure for high reliability. Excellent solderability and high heat resistance Low DC resistance. No cross coupling due to magnetic shield Applications: Test Instruments DC-DC converter circui...
...Installation Removable Structure Cabinet Current DC Trademark Witry OEM Transport Package Plywood Pallet Origin Shandong China HS Code 8504402000 Product Description GZDW type high frequency switch DC power ...
... temperature ≤95% (35 ℃) Overload performance Rated Current 120%, 2 hours. Voltage drop Regular one is 75mV,And 50mv 60mv 70mv 100mv can be customized Under the load heating The temperature rise changes tend...
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